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Xu, H. X., Xu, J. P., Li, C. X., Lai, P. T. (2010) Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient. Applied Physics Letters, 97 (2). 22903pp. doi:10.1063/1.3462301

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Reference TypeJournal (article/letter/editorial)
TitleImproved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient
JournalApplied Physics Letters
AuthorsXu, H. X.Author
Xu, J. P.Author
Li, C. X.Author
Lai, P. T.Author
Year2010 (July 12)Volume97
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.3462301Search in ResearchGate
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Mindat Ref. ID8588130Long-form Identifiermindat:1:5:8588130:9
GUID0
Full ReferenceXu, H. X., Xu, J. P., Li, C. X., Lai, P. T. (2010) Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient. Applied Physics Letters, 97 (2). 22903pp. doi:10.1063/1.3462301
Plain TextXu, H. X., Xu, J. P., Li, C. X., Lai, P. T. (2010) Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient. Applied Physics Letters, 97 (2). 22903pp. doi:10.1063/1.3462301
In(2010, July) Applied Physics Letters Vol. 97 (2) AIP Publishing

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Zhang, X. F., Xu, J. P., Li, C. X., Lai, P. T., Chan, C. L., Guan, J. G. (2008) Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer. Applied Physics Letters, 92 (26). 262902pp. doi:10.1063/1.2954012
Xu, H. X., Xu, J. P., Li, C. X., Chan, C. L., Lai, P. T. (2010) Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Applied Physics A, 99. 903-906 doi:10.1007/s00339-010-5665-5
Xu, J. P., Ji, F., Li, C. X., Lai, P. T., Guan, J. G., Liu, Y. R. (2007) Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer. Applied Physics Letters, 91 (15). 152905pp. doi:10.1063/1.2798248
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