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Liang, C.-T., Lin, Li-Hung, Huang, J. Z., Zhang, Zhi-Yao, Sun, Zhe-Hau, Chen, Kuang Yao, Chen, N. C., Chang, P. H., Chang, Chin-An (2007) Electron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates. Applied Physics Letters, 90 (2). 22107pp. doi:10.1063/1.2430778

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Reference TypeJournal (article/letter/editorial)
TitleElectron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates
JournalApplied Physics Letters
AuthorsLiang, C.-T.Author
Lin, Li-HungAuthor
Huang, J. Z.Author
Zhang, Zhi-YaoAuthor
Sun, Zhe-HauAuthor
Chen, Kuang YaoAuthor
Chen, N. C.Author
Chang, P. H.Author
Chang, Chin-AnAuthor
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2430778Search in ResearchGate
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Mindat Ref. ID8554039Long-form Identifiermindat:1:5:8554039:6
GUID0
Full ReferenceLiang, C.-T., Lin, Li-Hung, Huang, J. Z., Zhang, Zhi-Yao, Sun, Zhe-Hau, Chen, Kuang Yao, Chen, N. C., Chang, P. H., Chang, Chin-An (2007) Electron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates. Applied Physics Letters, 90 (2). 22107pp. doi:10.1063/1.2430778
Plain TextLiang, C.-T., Lin, Li-Hung, Huang, J. Z., Zhang, Zhi-Yao, Sun, Zhe-Hau, Chen, Kuang Yao, Chen, N. C., Chang, P. H., Chang, Chin-An (2007) Electron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates. Applied Physics Letters, 90 (2). 22107pp. doi:10.1063/1.2430778
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Liang, C.-T., Chen, Kuang Yao, Chen, N. C., Chang, P. H., Chang, Chin-An (2006) Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on p-type Si substrates. Applied Physics Letters, 89 (13). 132107pp. doi:10.1063/1.2357005
Huang, Jian-Zhe, Chen, Kuang Yao, Chen, Kui-Ming, Han, Shiou-Shian, Lin, Li-Hung, Sun, Zhi-Hao, Liang, C.-T., Chang, P. H., Chen, N. C., Chang, Chin-An (2007) Electron-Electron Interactions in a Two-Dimensional Electron Systemin an Al0.15Ga0.85N/GaN Heterostructure Grown on p-Type Si. Journal of the Korean Physical Society, 50 (3). 754pp. doi:10.3938/jkps.50.754
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Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Yu, C. L. (2010) AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures. Applied Physics Letters, 96 (21). 212105pp. doi:10.1063/1.3421392
Hang, D. R., Liang, C.-T., Huang, C. F., Chang, Y. H., Chen, Y. F., Jiang, H. X., Lin, J. Y. (2001) Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction. Applied Physics Letters, 79 (1). 66-68 doi:10.1063/1.1380245
 
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