Houssa, M., Nelis, D., Hellin, D., Pourtois, G., Conard, T., Paredis, K., Vanormelingen, K., Vantomme, A., Van Bael, M. K., Mullens, J., Caymax, M., Meuris, M., Heyns, M. M. (2007) H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface. Applied Physics Letters, 90 (22). 222105pp. doi:10.1063/1.2743385

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Reference Type	Journal (article/letter/editorial)
Title	H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
Journal	Applied Physics Letters
Authors	Houssa, M.		Author
	Nelis, D.		Author
	Hellin, D.		Author
	Pourtois, G.		Author
	Conard, T.		Author
	Paredis, K.		Author
	Vanormelingen, K.		Author
	Vantomme, A.		Author
	Van Bael, M. K.		Author
	Mullens, J.		Author
	Caymax, M.		Author
	Meuris, M.		Author
	Heyns, M. M.		Author
Year	2007 (May 28)	Volume	90
Issue	22
Publisher	AIP Publishing
DOI	doi:10.1063/1.2743385Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8554322	Long-form Identifier	mindat:1:5:8554322:3
GUID	0
Full Reference	Houssa, M., Nelis, D., Hellin, D., Pourtois, G., Conard, T., Paredis, K., Vanormelingen, K., Vantomme, A., Van Bael, M. K., Mullens, J., Caymax, M., Meuris, M., Heyns, M. M. (2007) H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface. Applied Physics Letters, 90 (22). 222105pp. doi:10.1063/1.2743385
Plain Text	Houssa, M., Nelis, D., Hellin, D., Pourtois, G., Conard, T., Paredis, K., Vanormelingen, K., Vantomme, A., Van Bael, M. K., Mullens, J., Caymax, M., Meuris, M., Heyns, M. M. (2007) H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface. Applied Physics Letters, 90 (22). 222105pp. doi:10.1063/1.2743385
In	(2007, May) Applied Physics Letters Vol. 90 (22) AIP Publishing

	Pourtois, G., Houssa, M., Delabie, A., Conard, T., Caymax, M., Meuris, M., Heyns, M. M. (2008) Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation. Applied Physics Letters, 92 (3). 32105pp. doi:10.1063/1.2833696
	Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M.M. (2008) Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study. Surface Science, 602 (4). doi:10.1016/j.susc.2007.12.040
	Pourtois, G., Houssa, M., De Jaeger, B., Kaczer, B., Leys, F., Meuris, M., Caymax, M., Groeseneken, G., Heyns, M. M. (2007) Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling. Applied Physics Letters, 91 (2). 23506pp. doi:10.1063/1.2756367
	Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M. M., Afanas’ev, V. V., Stesmans, A. (2008) Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2. Applied Physics Letters, 93 (16). 161909pp. doi:10.1063/1.3006320
	Scarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Stesmans, A., Meuris, M., Heyns, M. M. (2009) A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface. Applied Physics Letters, 95 (25). 253504pp. doi:10.1063/1.3275737
	Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M. M. (2008) First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf). Applied Physics Letters, 92 (24). 242101pp. doi:10.1063/1.2944892
	Brunco, D. P., Dimoulas, A., Boukos, N., Houssa, M., Conard, T., Martens, K., Zhao, C., Bellenger, F., Caymax, M., Meuris, M., Heyns, M. M. (2007) Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium. Journal of Applied Physics, 102 (2). 24104pp. doi:10.1063/1.2756519
	Bellenger, F., Houssa, M., Delabie, A., Afanasiev, V., Conard, T., Caymax, M., Meuris, M., De Meyer, K., Heyns, M. M. (2008) Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments. Journal of the Electrochemical Society, 155. doi:10.1149/1.2819626
	Scarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Meuris, M., Heyns, M.M., Stesmans, A. (2009) Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles study. Surface Science, 603 (1). 203-208 doi:10.1016/j.susc.2008.11.002
	Caymax, M., Houssa, M., Pourtois, G., Bellenger, F., Martens, K., Delabie, A., Van Elshocht, S. (2008) Interface control of high-k gate dielectrics on Ge. Applied Surface Science, 254. 6094-6099 doi:10.1016/j.apsusc.2008.02.134
	Sankaran, K., Pourtois, G., Houssa, M., Stesmans, A., Caymax, M., Heyns, M. M. (2009) First-principles investigation of the electron spin resonance parameters of germanium interfacial dangling bond centers. Applied Physics Letters, 94 (18). 184103pp. doi:10.1063/1.3130764

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