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Scarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Stesmans, A., Meuris, M., Heyns, M. M. (2009) A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface. Applied Physics Letters, 95 (25). 253504pp. doi:10.1063/1.3275737

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Reference TypeJournal (article/letter/editorial)
TitleA theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface
JournalApplied Physics Letters
AuthorsScarrozza, M.Author
Pourtois, G.Author
Houssa, M.Author
Caymax, M.Author
Stesmans, A.Author
Meuris, M.Author
Heyns, M. M.Author
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3275737Search in ResearchGate
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Mindat Ref. ID8580127Long-form Identifiermindat:1:5:8580127:9
GUID0
Full ReferenceScarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Stesmans, A., Meuris, M., Heyns, M. M. (2009) A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface. Applied Physics Letters, 95 (25). 253504pp. doi:10.1063/1.3275737
Plain TextScarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Stesmans, A., Meuris, M., Heyns, M. M. (2009) A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface. Applied Physics Letters, 95 (25). 253504pp. doi:10.1063/1.3275737
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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Scarrozza, M., Pourtois, G., Houssa, M., Caymax, M., Meuris, M., Heyns, M.M., Stesmans, A. (2009) Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles study. Surface Science, 603 (1). 203-208 doi:10.1016/j.susc.2008.11.002
Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M. M., Afanas’ev, V. V., Stesmans, A. (2008) Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2. Applied Physics Letters, 93 (16). 161909pp. doi:10.1063/1.3006320
Houssa, M., Afanas’ev, V. V., Stesmans, A., Pourtois, G., Meuris, M., Heyns, M. M. (2009) First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces. Applied Physics Letters, 95 (16). 162109pp. doi:10.1063/1.3253707
Sankaran, K., Pourtois, G., Houssa, M., Stesmans, A., Caymax, M., Heyns, M. M. (2009) First-principles investigation of the electron spin resonance parameters of germanium interfacial dangling bond centers. Applied Physics Letters, 94 (18). 184103pp. doi:10.1063/1.3130764
Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M.M. (2008) Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study. Surface Science, 602 (4). doi:10.1016/j.susc.2007.12.040
Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M. M. (2008) First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf). Applied Physics Letters, 92 (24). 242101pp. doi:10.1063/1.2944892
Pourtois, G., Houssa, M., Delabie, A., Conard, T., Caymax, M., Meuris, M., Heyns, M. M. (2008) Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation. Applied Physics Letters, 92 (3). 32105pp. doi:10.1063/1.2833696
Houssa, M., Nelis, D., Hellin, D., Pourtois, G., Conard, T., Paredis, K., Vanormelingen, K., Vantomme, A., Van Bael, M. K., Mullens, J., Caymax, M., Meuris, M., Heyns, M. M. (2007) H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface. Applied Physics Letters, 90 (22). 222105pp. doi:10.1063/1.2743385
Merckling, C., Chang, Y.C., Lu, C.Y., Penaud, J., Brammertz, G., Scarrozza, M., Pourtois, G., Kwo, J., Hong, M., Dekoster, J., Meuris, M., Heyns, M., Caymax, M. (2011) Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation. Surface Science, 605 (19). 1778-1783 doi:10.1016/j.susc.2011.06.008
Houssa, M., Scarrozza, M., Pourtois, G., Afanas’ev, V. V., Stesmans, A. (2011) Universal stress-defect correlation at (100)semiconductor/oxide interfaces. Applied Physics Letters, 98 (14). 141901pp. doi:10.1063/1.3575559
Scarrozza, Marco, Pourtois, Geoffrey, Houssa, Michel, Heyns, Marc, Stesmans, André (2012) Oxidation of the GaAs(001) surface: Insights from first-principles calculations. Physical Review B, 85 (19) doi:10.1103/physrevb.85.195307
 
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