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Brooksby, J. C., Mei, J., Ponce, F. A. (2007) Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. Applied Physics Letters, 90 (23). 231901pp. doi:10.1063/1.2746062

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells
JournalApplied Physics Letters
AuthorsBrooksby, J. C.Author
Mei, J.Author
Ponce, F. A.Author
Year2007 (June 4)Volume90
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2746062Search in ResearchGate
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Mindat Ref. ID8554435Long-form Identifiermindat:1:5:8554435:6
GUID0
Full ReferenceBrooksby, J. C., Mei, J., Ponce, F. A. (2007) Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. Applied Physics Letters, 90 (23). 231901pp. doi:10.1063/1.2746062
Plain TextBrooksby, J. C., Mei, J., Ponce, F. A. (2007) Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. Applied Physics Letters, 90 (23). 231901pp. doi:10.1063/1.2746062
In(2007, June) Applied Physics Letters Vol. 90 (23) AIP Publishing

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Mei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817
Wu, Z. H., Fischer, A. M., Ponce, F. A., Lee, W., Ryou, J. H., Limb, J., Yoo, D., Dupuis, R. D. (2007) Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes. Applied Physics Letters, 91 (4). 41915pp. doi:10.1063/1.2760160
Cherns, D., Henley, S. J., Ponce, F. A. (2001) Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Applied Physics Letters, 78 (18). 2691-2693 doi:10.1063/1.1369610
Bayram, C., Teherani, F. Hosseini, Rogers, D. J., Razeghi, M. (2008) A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN. Applied Physics Letters, 93 (8). 81111pp. doi:10.1063/1.2975165
Li, Shunfeng, Schörmann, Jörg, As, Donat J., Lischka, Klaus (2007) Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells. Applied Physics Letters, 90 (7). 71903pp. doi:10.1063/1.2475564
Ferdous, M. S., Wang, X., Fairchild, M. N., Hersee, S. D. (2007) Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes. Applied Physics Letters, 91 (23). 231107pp. doi:10.1063/1.2822395
Huang, Y., Sun, K. W., Fischer, A. M., Wei, Q. Y., Juday, R., Ponce, F. A., Kato, R., Yokogawa, T. (2011) Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells. Applied Physics Letters, 98 (26). 261914pp. doi:10.1063/1.3605253
Li, T., Fischer, A. M., Wei, Q. Y., Ponce, F. A., Detchprohm, T., Wetzel, C. (2010) Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells. Applied Physics Letters, 96 (3). 31906pp. doi:10.1063/1.3293298
Huang, Chi-Feng, Lu, Chih-Feng, Tang, Tsung-Yi, Huang, Jeng-Jie, Yang, C. C. (2007) Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells. Applied Physics Letters, 90 (15). 151122pp. doi:10.1063/1.2723197
Bell, A., Christen, J., Bertram, F., Ponce, F. A., Marui, H., Tanaka, S. (2004) Localization versus field effects in single InGaN quantum wells. Applied Physics Letters, 84 (1). 58-60 doi:10.1063/1.1638880
Barletta, Philip T., Acar Berkman, E., Moody, Baxter F., El-Masry, Nadia A., Emara, Ahmed M., Reed, Mason J., Bedair, S. M. (2007) Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures. Applied Physics Letters, 90 (15). 151109pp. doi:10.1063/1.2721133
 
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