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Ferdous, M. S., Wang, X., Fairchild, M. N., Hersee, S. D. (2007) Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes. Applied Physics Letters, 91 (23). 231107pp. doi:10.1063/1.2822395

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Reference TypeJournal (article/letter/editorial)
TitleEffect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
JournalApplied Physics Letters
AuthorsFerdous, M. S.Author
Wang, X.Author
Fairchild, M. N.Author
Hersee, S. D.Author
Year2007 (December 3)Volume91
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2822395Search in ResearchGate
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Mindat Ref. ID8558299Long-form Identifiermindat:1:5:8558299:4
GUID0
Full ReferenceFerdous, M. S., Wang, X., Fairchild, M. N., Hersee, S. D. (2007) Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes. Applied Physics Letters, 91 (23). 231107pp. doi:10.1063/1.2822395
Plain TextFerdous, M. S., Wang, X., Fairchild, M. N., Hersee, S. D. (2007) Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes. Applied Physics Letters, 91 (23). 231107pp. doi:10.1063/1.2822395
In(2007, December) Applied Physics Letters Vol. 91 (23) AIP Publishing

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Ferdous, M. S., Sun, X. Y., Wang, X., Fairchild, M. N., Hersee, S. D. (2006) Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy. Journal of Applied Physics, 99 (9). 96105pp. doi:10.1063/1.2197059
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