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Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N. (2007) Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Applied Physics Letters, 90 (4). 43104pp. doi:10.1063/1.2434153

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Reference TypeJournal (article/letter/editorial)
TitleDiameter dependent transport properties of gallium nitride nanowire field effect transistors
JournalApplied Physics Letters
AuthorsMotayed, AbhishekAuthor
Vaudin, MarkAuthor
Davydov, Albert V.Author
Melngailis, JohnAuthor
He, MaoqiAuthor
Mohammad, S. N.Author
Year2007 (January 22)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2434153Search in ResearchGate
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Mindat Ref. ID8555046Long-form Identifiermindat:1:5:8555046:3
GUID0
Full ReferenceMotayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N. (2007) Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Applied Physics Letters, 90 (4). 43104pp. doi:10.1063/1.2434153
Plain TextMotayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N. (2007) Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Applied Physics Letters, 90 (4). 43104pp. doi:10.1063/1.2434153
In(2007, January) Applied Physics Letters Vol. 90 (4) AIP Publishing

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Motayed, Abhishek, Davydov, Albert V., He, Maoqi, Mohammad, S. N., Melngailis, John (2007) 365nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes. Applied Physics Letters, 90 (18). 183120pp. doi:10.1063/1.2735928
Motayed, Abhishek, He, Maoqi, Davydov, Albert V., Melngailis, John, Mohammad, S. N. (2006) Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique. Journal of Applied Physics, 100 (11). 114310pp. doi:10.1063/1.2397383
Motayed, Abhishek, Davydov, Albert V., Mohammad, S. N., Melngailis, John (2008) Experimental investigation of electron transport properties of gallium nitride nanowires. Journal of Applied Physics, 104 (2). 24302pp. doi:10.1063/1.2952035
Motayed, Abhishek, Davydov, Albert V., Vaudin, Mark D., Levin, Igor, Melngailis, John, Mohammad, S. N. (2006) Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition. Journal of Applied Physics, 100 (2). 24306pp. doi:10.1063/1.2215354
Krylyuk, Sergiy, Davydov, Albert V., Levin, Igor, Motayed, Abhishek, Vaudin, Mark D. (2009) Rapid thermal oxidation of silicon nanowires. Applied Physics Letters, 94 (6). 63113pp. doi:10.1063/1.3079395
Motayed, Abhishek, Davydov, Albert V. (2008) GaN-nanowire/amorphous-Si core-shell heterojunction diodes. Applied Physics Letters, 93 (19). 193102pp. doi:10.1063/1.3021390
Sharma, Deepak, Motayed, Abhishek, Shah, Pankaj B., Amani, Matin, Georgieva, Mariela, Glen Birdwell, A., Dubey, Madan, Li, Qiliang, Davydov, Albert V. (2015) Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors. Applied Physics Letters, 107 (16). 162102pp. doi:10.1063/1.4932945
Motayed, Abhishek, Davydov, Albert V., Bendersky, Leonid A., Wood, Mark C., Derenge, Michael A., Wang, Dong Feng, Jones, Kenneth A., Mohammad, S. Noor (2002) High-transparency Ni/Au bilayer contacts to n-type GaN. Journal of Applied Physics, 92 (9). 5218-5227 doi:10.1063/1.1509109
He, Maoqi, Motayed, Abhishek, Noor Mohammad, S. (2007) Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method. The Journal of Chemical Physics, 126 (6). 64704pp. doi:10.1063/1.2432111
Motayed, Abhishek, Krylyuk, Sergiy, Davydov, Albert V. (2011) Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy. Applied Physics Letters, 99 (11). 113107pp. doi:10.1063/1.3637049
Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Motayed, A., Davydov, A. V. (2008) Low-frequency noise in GaN nanowire transistors. Journal of Applied Physics, 103 (6). 64501pp. doi:10.1063/1.2895398
 
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