Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz (2008) Unified retention model for localized charge trapping nonvolatile memory device. Applied Physics Letters, 92 (13). 133514pp. doi:10.1063/1.2906895
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Unified retention model for localized charge trapping nonvolatile memory device | ||
Journal | Applied Physics Letters | ||
Authors | Shapira, Asia | Author | |
Shur, Yael | Author | ||
Shacham-Diamand, Yosi | Author | ||
Shappir, Assaf | Author | ||
Eitan, Boaz | Author | ||
Year | 2008 (March 31) | Volume | 92 |
Issue | 13 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2906895Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8562175 | Long-form Identifier | mindat:1:5:8562175:2 |
GUID | 0 | ||
Full Reference | Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz (2008) Unified retention model for localized charge trapping nonvolatile memory device. Applied Physics Letters, 92 (13). 133514pp. doi:10.1063/1.2906895 | ||
Plain Text | Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz (2008) Unified retention model for localized charge trapping nonvolatile memory device. Applied Physics Letters, 92 (13). 133514pp. doi:10.1063/1.2906895 | ||
In | (2008, March) Applied Physics Letters Vol. 92 (13) AIP Publishing |
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