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Colinge, Jean-Pierre, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Akhavan, Nima Dehdashti (2008) Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors. Applied Physics Letters, 92 (13). 133511pp. doi:10.1063/1.2907330

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors
JournalApplied Physics Letters
AuthorsColinge, Jean-PierreAuthor
Afzalian, AryanAuthor
Lee, Chi-WooAuthor
Yan, RanAuthor
Akhavan, Nima DehdashtiAuthor
Year2008 (March 31)Volume92
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.2907330Search in ResearchGate
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Mindat Ref. ID8562191Long-form Identifiermindat:1:5:8562191:0
GUID0
Full ReferenceColinge, Jean-Pierre, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Akhavan, Nima Dehdashti (2008) Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors. Applied Physics Letters, 92 (13). 133511pp. doi:10.1063/1.2907330
Plain TextColinge, Jean-Pierre, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Akhavan, Nima Dehdashti (2008) Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors. Applied Physics Letters, 92 (13). 133511pp. doi:10.1063/1.2907330
In(2008, March) Applied Physics Letters Vol. 92 (13) AIP Publishing


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