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Raskin, Jean-Pierre, Colinge, Jean-Pierre, Ferain, Isabelle, Kranti, Abhinav, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran (2010) Mobility improvement in nanowire junctionless transistors by uniaxial strain. Applied Physics Letters, 97 (4). 42114pp. doi:10.1063/1.3474608

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Reference TypeJournal (article/letter/editorial)
TitleMobility improvement in nanowire junctionless transistors by uniaxial strain
JournalApplied Physics Letters
AuthorsRaskin, Jean-PierreAuthor
Colinge, Jean-PierreAuthor
Ferain, IsabelleAuthor
Kranti, AbhinavAuthor
Lee, Chi-WooAuthor
Akhavan, Nima DehdashtiAuthor
Yan, RanAuthor
Razavi, PedramAuthor
Yu, RanAuthor
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3474608Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589931Long-form Identifiermindat:1:5:8589931:7
GUID0
Full ReferenceRaskin, Jean-Pierre, Colinge, Jean-Pierre, Ferain, Isabelle, Kranti, Abhinav, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran (2010) Mobility improvement in nanowire junctionless transistors by uniaxial strain. Applied Physics Letters, 97 (4). 42114pp. doi:10.1063/1.3474608
Plain TextRaskin, Jean-Pierre, Colinge, Jean-Pierre, Ferain, Isabelle, Kranti, Abhinav, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran (2010) Mobility improvement in nanowire junctionless transistors by uniaxial strain. Applied Physics Letters, 97 (4). 42114pp. doi:10.1063/1.3474608
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Dehdashti Akhavan, Nima, Ferain, Isabelle, Razavi, Pedram, Yu, Ran, Colinge, Jean-Pierre (2011) Improvement of carrier ballisticity in junctionless nanowire transistors. Applied Physics Letters, 98 (10). 103510pp. doi:10.1063/1.3559625
Colinge, Jean-Pierre, Ferain, Isabelle, Kranti, Abhinav, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Razavi, Pedram, Yan, Ran, Yu, Ran (2011) Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions. Science of Advanced Materials, 3. 477-482 doi:10.1166/sam.2011.1163
Colinge, Jean-Pierre, Lee, Chi-Woo, Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Nazarov, Alexei N., Doria, Rodrigo T. (2010) Reduced electric field in junctionless transistors. Applied Physics Letters, 96 (7). 73510pp. doi:10.1063/1.3299014
Lee, Chi-Woo, Nazarov, Alexei N., Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Doria, Rodrigo T., Colinge, Jean-Pierre (2010) Low subthreshold slope in junctionless multigate transistors. Applied Physics Letters, 96 (10). 102106pp. doi:10.1063/1.3358131
Yu, Ran, Ferain, Isabelle, Akhavan, Nima Dehdashti, Razavi, Pedram, Duffy, Ray, Colinge, Jean-Pierre (2011) Characterization of a junctionless diode. Applied Physics Letters, 99 (1). 13502pp. doi:10.1063/1.3608150
Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Colinge, Jean-Pierre (2009) Junctionless multigate field-effect transistor. Applied Physics Letters, 94 (5). 53511pp. doi:10.1063/1.3079411
Akhavan, Nima Dehdashti, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Ferain, Isabelle, Razavi, Pedram, Yu, Ran, Fagas, Giorgos, Colinge, Jean-Pierre (2010) Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 108 (3). 34510pp. doi:10.1063/1.3457848
Colinge, Jean-Pierre, Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Razavi, Pedram, O'Neill, Brendan, Blake, Alan, White, Mary, Kelleher, Anne-Marie, McCarthy, Brendan, Murphy, Richard (2010) Nanowire transistors without junctions. Nature Nanotechnology, 5 (3). 225-229 doi:10.1038/nnano.2010.15
Colinge, Jean-Pierre, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Akhavan, Nima Dehdashti (2008) Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors. Applied Physics Letters, 92 (13). 133511pp. doi:10.1063/1.2907330
Razavi, Pedram, Fagas, Giorgos, Ferain, Isabelle, Yu, Ran, Das, Samaresh, Colinge, Jean-Pierre (2012) Influence of channel material properties on performance of nanowire transistors. Journal of Applied Physics, 111 (12). 124509pp. doi:10.1063/1.4729777
Colinge, Jean-Pierre, Lederer, Dimitri, Afzalian, Aryan, Yan, Ran, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Xiong, Weize (2009) Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors. Japanese Journal of Applied Physics, 48 (3) 34502 doi:10.1143/jjap.48.034502
 
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