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Corrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C. (2009) Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC. Applied Physics Letters, 94 (25). 251909pp. doi:10.1063/1.3159812

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Reference TypeJournal (article/letter/editorial)
TitleEffects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
JournalApplied Physics Letters
AuthorsCorrêa, S. A.Author
Radtke, C.Author
Soares, G. V.Author
Miotti, L.Author
Baumvol, I. J. R.Author
Dimitrijev, S.Author
Han, J.Author
Hold, L.Author
Kong, F.Author
Stedile, F. C.Author
Year2009 (June 22)Volume94
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3159812Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8575237Long-form Identifiermindat:1:5:8575237:1
GUID0
Full ReferenceCorrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C. (2009) Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC. Applied Physics Letters, 94 (25). 251909pp. doi:10.1063/1.3159812
Plain TextCorrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C. (2009) Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC. Applied Physics Letters, 94 (25). 251909pp. doi:10.1063/1.3159812
In(2009, June) Applied Physics Letters Vol. 94 (25) AIP Publishing

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Soares, G. V., Baumvol, I. J. R., Hold, L., Kong, F., Han, J., Dimitrijev, S., Radtke, C., Stedile, F. C. (2007) Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics. Applied Physics Letters, 91 (4). 41906pp. doi:10.1063/1.2763966
Soares, G. V., Baumvol, I. J. R., Corrêa, S. A., Radtke, C., Stedile, F. C. (2009) Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si. Applied Physics Letters, 95 (19). 191912pp. doi:10.1063/1.3262971
Stedile, Fernanda Chiarello, Corrêa, Silma Alberton, Radtke, Cláudio, Miotti, Leonardo, Baumvol, Israel J.R., Soares, Gabriel V., Kong, Fred, Han, Ji Sheng, Hold, Leonie, Dimitrijev, Sima (2010) Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures. Materials Science Forum, 645. 689-692 doi:10.4028/www.scientific.net/msf.645-648.689
Corrêa, S. A., Marmitt, G. G., Bom, N. M., da Rosa, A. T., Stedile, F. C., Radtke, C., Soares, G. V., Baumvol, I. J. R., Krug, C., Gobbi, A. L. (2009) Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC. Applied Physics Letters, 95 (5). 51916pp. doi:10.1063/1.3195702
Soares, G. V., Baumvol, I. J. R., Radtke, C., Stedile, F. C. (2007) Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures. Applied Physics Letters, 90 (8). 81906pp. doi:10.1063/1.2645341
McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., Baumvol, I. J. R., Radtke, C. (2000) Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters, 76 (5). 568-570 doi:10.1063/1.125819
Radtke, C., Stedile, F. C., Soares, G. V., Krug, C., da Rosa, E. B. O., Driemeier, C., Baumvol, I. J. R., Pezzi, R. P. (2008) Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92 (25). 252909pp. doi:10.1063/1.2945643
DA ROSA, E. B. O., KRUG, C., RADTKE, C., PEZZI, R. P., MIOTTI, L., BRANDÃO, R., MORAIS, J., BAUMVOL, I. J. R., STEDILE, F. C. (2002) SURFACE AND INTERFACE INVESTIGATION OF NANOMETRIC DIELECTRIC FILMS ON Si AND ON SiC. Surface Review and Letters, 9 (1). 393-399 doi:10.1142/s0218625x02002373
Soares, G. V., Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2006) Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth. Applied Physics Letters, 88 (4). 41901pp. doi:10.1063/1.2167608
Soares, G. V., Krug, C., Miotti, L., Bastos, K. P., Lucovsky, G., Baumvol, I. J. R., Radtke, C. (2011) Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate. Applied Physics Letters, 98 (13). 131912pp. doi:10.1063/1.3574093
Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
 
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