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Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033

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Reference TypeJournal (article/letter/editorial)
TitleOxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC
JournalApplied Physics Letters
AuthorsRadtke, C.Author
Baumvol, I. J. R.Author
Ferrera, B. C.Author
Stedile, F. C.Author
Year2004 (October 18)Volume85
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.1807033Search in ResearchGate
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Mindat Ref. ID8540318Long-form Identifiermindat:1:5:8540318:3
GUID0
Full ReferenceRadtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
Plain TextRadtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
In(2004, October) Applied Physics Letters Vol. 85 (16) AIP Publishing

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Radtke, C., Baumvol, Israel J.R., Ferrera, B.C., Stedile, Fernanda Chiarello (2005) The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC. Materials Science Forum, 483. 657-660 doi:10.4028/www.scientific.net/msf.483-485.657
Radtke, C., Stedile, F. C., Soares, G. V., Krug, C., da Rosa, E. B. O., Driemeier, C., Baumvol, I. J. R., Pezzi, R. P. (2008) Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92 (25). 252909pp. doi:10.1063/1.2945643
Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2002) Effects of ion irradiation in the thermal oxidation of SiC. Physical Review B, 66 (15) doi:10.1103/physrevb.66.155437
McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., Baumvol, I. J. R., Radtke, C. (2000) Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters, 76 (5). 568-570 doi:10.1063/1.125819
Soares, G. V., Baumvol, I. J. R., Hold, L., Kong, F., Han, J., Dimitrijev, S., Radtke, C., Stedile, F. C. (2007) Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics. Applied Physics Letters, 91 (4). 41906pp. doi:10.1063/1.2763966
Soares, G. V., Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2006) Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth. Applied Physics Letters, 88 (4). 41901pp. doi:10.1063/1.2167608
Soares, G. V., Baumvol, I. J. R., Radtke, C., Stedile, F. C. (2007) Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures. Applied Physics Letters, 90 (8). 81906pp. doi:10.1063/1.2645341
Soares, G. V., Baumvol, I. J. R., Corrêa, S. A., Radtke, C., Stedile, F. C. (2009) Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si. Applied Physics Letters, 95 (19). 191912pp. doi:10.1063/1.3262971
Radtke, C., Baumvol, I. J. R., Morais, J., Stedile, F. C. (2001) Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies. Applied Physics Letters, 78 (23). 3601-3603 doi:10.1063/1.1374518
Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1999) Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon. Applied Physics Letters, 74 (13). 1872-1874 doi:10.1063/1.123697
Corrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C. (2009) Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC. Applied Physics Letters, 94 (25). 251909pp. doi:10.1063/1.3159812
 
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