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Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1999) Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon. Applied Physics Letters, 74 (13). 1872-1874 doi:10.1063/1.123697

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Reference TypeJournal (article/letter/editorial)
TitleIsotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
JournalApplied Physics Letters
AuthorsBaumvol, I. J. R.Author
Salgado, T. D. M.Author
Stedile, F. C.Author
Radtke, C.Author
Krug, C.Author
Year1999 (March 29)Volume74
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.123697Search in ResearchGate
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Mindat Ref. ID8523218Long-form Identifiermindat:1:5:8523218:7
GUID0
Full ReferenceBaumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1999) Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon. Applied Physics Letters, 74 (13). 1872-1874 doi:10.1063/1.123697
Plain TextBaumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1999) Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon. Applied Physics Letters, 74 (13). 1872-1874 doi:10.1063/1.123697
In(1999, March) Applied Physics Letters Vol. 74 (13) AIP Publishing

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Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1998) Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2. Journal of Applied Physics, 83 (10). 5579-5581 doi:10.1063/1.367396
Radtke, C., Stedile, F. C., Soares, G. V., Krug, C., da Rosa, E. B. O., Driemeier, C., Baumvol, I. J. R., Pezzi, R. P. (2008) Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92 (25). 252909pp. doi:10.1063/1.2945643
Corrêa, S. A., Marmitt, G. G., Bom, N. M., da Rosa, A. T., Stedile, F. C., Radtke, C., Soares, G. V., Baumvol, I. J. R., Krug, C., Gobbi, A. L. (2009) Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC. Applied Physics Letters, 95 (5). 51916pp. doi:10.1063/1.3195702
Baumvol, I. J. R., Krug, C., Stedile, F. C., Gorris, F., Schulte, W. H. (1999) Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) inO2. Physical Review B, 60 (3) 1492-1495 doi:10.1103/physrevb.60.1492
Baumvol, I. J. R., Krug, C., Stedile, F. C., Green, M. L., Jacobson, D. C., Eaglesham, D., Bernstein, J. D., Shao, J., Denholm, A. S., Kellerman, P. L. (1999) Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation. Applied Physics Letters, 74 (6). 806-808 doi:10.1063/1.123374
Baumvol, I. J. R., Salgado, T. D. M., Radtke, C., Krug, C., de Andrade, J. (1998) Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films. Applied Physics Letters, 73 (14). 1970-1972 doi:10.1063/1.122338
Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
Krug, C., da Rosa, E. B. O., de Almeida, R. M. C., Morais, J., Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C. (2001) Kruget al.Reply:. Physical Review Letters, 86 (20). 4714 doi:10.1103/physrevlett.86.4714
McDonald, K., Huang, M. B., Weller, R. A., Feldman, L. C., Williams, J. R., Stedile, F. C., Baumvol, I. J. R., Radtke, C. (2000) Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters, 76 (5). 568-570 doi:10.1063/1.125819
Soares, G. V., Feijó, T. O., Baumvol, I. J. R., Aguzzoli, C., Krug, C., Radtke, C. (2014) Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100). Applied Physics Letters, 104 (4). 42901pp. doi:10.1063/1.4862979
Krug, C., da Rosa, E. B. O., de Almeida, R. M. C., Morais, J., Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C. (2000) Atomic Transport and Chemical Stability during Annealing of UltrathinAl2O3Films on Si. Physical Review Letters, 85 (19). 4120-4123 doi:10.1103/physrevlett.85.4120
 
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