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Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1998) Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2. Journal of Applied Physics, 83 (10). 5579-5581 doi:10.1063/1.367396

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Reference TypeJournal (article/letter/editorial)
TitleEffects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2
JournalJournal of Applied Physics
AuthorsBaumvol, I. J. R.Author
Salgado, T. D. M.Author
Stedile, F. C.Author
Radtke, C.Author
Krug, C.Author
Year1998 (May 15)Volume83
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.367396Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5089425Long-form Identifiermindat:1:5:5089425:9
GUID0
Full ReferenceBaumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1998) Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2. Journal of Applied Physics, 83 (10). 5579-5581 doi:10.1063/1.367396
Plain TextBaumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1998) Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2. Journal of Applied Physics, 83 (10). 5579-5581 doi:10.1063/1.367396
In(1998, May) Journal of Applied Physics Vol. 83 (10) AIP Publishing

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Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C., Radtke, C., Krug, C. (1999) Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon. Applied Physics Letters, 74 (13). 1872-1874 doi:10.1063/1.123697
Baumvol, I. J. R., Salgado, T. D. M., Radtke, C., Krug, C., de Andrade, J. (1998) Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films. Applied Physics Letters, 73 (14). 1970-1972 doi:10.1063/1.122338
Radtke, C., Stedile, F. C., Soares, G. V., Krug, C., da Rosa, E. B. O., Driemeier, C., Baumvol, I. J. R., Pezzi, R. P. (2008) Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92 (25). 252909pp. doi:10.1063/1.2945643
Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2002) Effects of ion irradiation in the thermal oxidation of SiC. Physical Review B, 66 (15) doi:10.1103/physrevb.66.155437
Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. (2004) Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC. Applied Physics Letters, 85 (16). 3402-3404 doi:10.1063/1.1807033
Corrêa, S. A., Marmitt, G. G., Bom, N. M., da Rosa, A. T., Stedile, F. C., Radtke, C., Soares, G. V., Baumvol, I. J. R., Krug, C., Gobbi, A. L. (2009) Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC. Applied Physics Letters, 95 (5). 51916pp. doi:10.1063/1.3195702
Ganem, J.-J., Trimaille, I., André, P., Rigo, S., Stedile, F. C., Baumvol, I. J. R. (1997) Diffusion of near surface defects during the thermal oxidation of silicon. Journal of Applied Physics, 81 (12). 8109-8111 doi:10.1063/1.365420
Krug, C., da Rosa, E. B. O., de Almeida, R. M. C., Morais, J., Baumvol, I. J. R., Salgado, T. D. M., Stedile, F. C. (2001) Kruget al.Reply:. Physical Review Letters, 86 (20). 4714 doi:10.1103/physrevlett.86.4714
Vickridge, I. C., Trimaille, I., Ganem, J.-J., Rigo, S., Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2002) Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide. Physical Review Letters, 89 (25). doi:10.1103/physrevlett.89.256102
Soares, G. V., Baumvol, I. J. R., Hold, L., Kong, F., Han, J., Dimitrijev, S., Radtke, C., Stedile, F. C. (2007) Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics. Applied Physics Letters, 91 (4). 41906pp. doi:10.1063/1.2763966
Baumvol, I. J. R., Krug, C., Stedile, F. C., Green, M. L., Jacobson, D. C., Eaglesham, D., Bernstein, J. D., Shao, J., Denholm, A. S., Kellerman, P. L. (1999) Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation. Applied Physics Letters, 74 (6). 806-808 doi:10.1063/1.123374
 
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