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Marent, A., Nowozin, T., Gelze, J., Luckert, F., Bimberg, D. (2009) Hole-based memory operation in an InAs/GaAs quantum dot heterostructure. Applied Physics Letters, 95 (24). 242114pp. doi:10.1063/1.3275758

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Reference TypeJournal (article/letter/editorial)
TitleHole-based memory operation in an InAs/GaAs quantum dot heterostructure
JournalApplied Physics Letters
AuthorsMarent, A.Author
Nowozin, T.Author
Gelze, J.Author
Luckert, F.Author
Bimberg, D.Author
Year2009 (December 14)Volume95
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3275758Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8580044Long-form Identifiermindat:1:5:8580044:7
GUID0
Full ReferenceMarent, A., Nowozin, T., Gelze, J., Luckert, F., Bimberg, D. (2009) Hole-based memory operation in an InAs/GaAs quantum dot heterostructure. Applied Physics Letters, 95 (24). 242114pp. doi:10.1063/1.3275758
Plain TextMarent, A., Nowozin, T., Gelze, J., Luckert, F., Bimberg, D. (2009) Hole-based memory operation in an InAs/GaAs quantum dot heterostructure. Applied Physics Letters, 95 (24). 242114pp. doi:10.1063/1.3275758
In(2009, December) Applied Physics Letters Vol. 95 (24) AIP Publishing

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Geller, M., Marent, A., Nowozin, T., Bimberg, D., Akçay, N., Öncan, N. (2008) A write time of 6ns for quantum dot–based memory structures. Applied Physics Letters, 92 (9). 92108pp. doi:10.1063/1.2890731
Nowozin, T., Marent, A., Geller, M., Bimberg, D., Akçay, N., Öncan, N. (2009) Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure. Applied Physics Letters, 94 (4). 42108pp. doi:10.1063/1.3076126
Nowozin, T., Beckel, A., Bimberg, D., Lorke, A., Geller, M. (2014) 3 ns single-shot read-out in a quantum dot-based memory structure. Applied Physics Letters, 104 (5). 53111pp. doi:10.1063/1.4864281
Nowozin, T., Marent, A., Bimberg, D., Beckel, A., Marquardt, B., Lorke, A., Geller, M. (2012) Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K. physica status solidi (c), 9 (2). 243-246 doi:10.1002/pssc.201100218
MĂŒller, C. R., Worschech, L., Heinrich, J., Höfling, S., Forchel, A. (2008) Room temperature memory operation of a single InAs quantum dot layer in a GaAs∕AlGaAs heterostructure. Applied Physics Letters, 93 (6). 63502pp. doi:10.1063/1.2967880
Walter, G., Chung, T., Holonyak, N. (2002) High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation. Applied Physics Letters, 80 (7). 1126-1128 doi:10.1063/1.1451989
Tracy, L. A., Hargett, T. W., Reno, J. L. (2014) Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. Applied Physics Letters, 104 (12). 123101pp. doi:10.1063/1.4868971
Hayne, M, Young, R J, Smakman, E P, Nowozin, T, Hodgson, P, Garleff, J K, Rambabu, P, Koenraad, P M, Marent, A, Bonato, L, Schliwa, A, Bimberg, D (2013) The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. Journal of Physics D: Applied Physics, 46. 264001pp. doi:10.1088/0022-3727/46/26/264001
Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N. (2007) 106years extrapolated hole storage time in GaSb∕AlAs quantum dots. Applied Physics Letters, 91 (24). 242109pp. doi:10.1063/1.2824884
Chung, T., Walter, G., Holonyak, N. (2001) Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser. Applied Physics Letters, 79 (27). 4500-4502 doi:10.1063/1.1430025
Kannan, E. S., Kim, Gil-Ho, Ritchie, D. A. (2009) Memory characteristics of InAs quantum dots embedded in GaAs quantum well. Applied Physics Letters, 95 (14). 143506pp. doi:10.1063/1.3242347
 
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