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Hsieh, Zhen-Ying, Wang, Mu-Chun, Chen, Shuang-Yuan, Chen, Chih, Huang, Heng-Sheng (2009) Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress. Applied Physics Letters, 95 (25). 253503pp. doi:10.1063/1.3275728

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Reference TypeJournal (article/letter/editorial)
TitleGate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress
JournalApplied Physics Letters
AuthorsHsieh, Zhen-YingAuthor
Wang, Mu-ChunAuthor
Chen, Shuang-YuanAuthor
Chen, ChihAuthor
Huang, Heng-ShengAuthor
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3275728Search in ResearchGate
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Mindat Ref. ID8580122Long-form Identifiermindat:1:5:8580122:4
GUID0
Full ReferenceHsieh, Zhen-Ying, Wang, Mu-Chun, Chen, Shuang-Yuan, Chen, Chih, Huang, Heng-Sheng (2009) Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress. Applied Physics Letters, 95 (25). 253503pp. doi:10.1063/1.3275728
Plain TextHsieh, Zhen-Ying, Wang, Mu-Chun, Chen, Shuang-Yuan, Chen, Chih, Huang, Heng-Sheng (2009) Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress. Applied Physics Letters, 95 (25). 253503pp. doi:10.1063/1.3275728
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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