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Akazawa, M., Matsuyama, T., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2010) Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 96 (13). 132104pp. doi:10.1063/1.3368689

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Reference TypeJournal (article/letter/editorial)
TitleSmall valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsAkazawa, M.Author
Matsuyama, T.Author
Hashizume, T.Author
Hiroki, M.Author
Yamahata, S.Author
Shigekawa, N.Author
Year2010 (March 29)Volume96
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3368689Search in ResearchGate
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Mindat Ref. ID8582350Long-form Identifiermindat:1:5:8582350:9
GUID0
Full ReferenceAkazawa, M., Matsuyama, T., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2010) Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 96 (13). 132104pp. doi:10.1063/1.3368689
Plain TextAkazawa, M., Matsuyama, T., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2010) Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 96 (13). 132104pp. doi:10.1063/1.3368689
In(2010, March) Applied Physics Letters Vol. 96 (13) AIP Publishing

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Akazawa, M., Gao, B., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2011) Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 109 (1). 13703pp. doi:10.1063/1.3527058
Akazawa, M., Gao, B., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2011) Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures. Applied Physics Letters, 98 (14). 142117pp. doi:10.1063/1.3578449
Akazawa, M., Nakano, T. (2012) Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition. Applied Physics Letters, 101 (12). 122110pp. doi:10.1063/1.4754141
Akazawa, M., Gao, B., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2012) Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces. physica status solidi (c), 9 (3). 592-595 doi:10.1002/pssc.201100319
Akazawa, M., Gao, B., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N. (2011) Investigation of polarization-induced electric field in ultrathin InAlN layers on GaN by X-ray photoelectron spectroscopy. physica status solidi (c), 8 (7). 2139-2141 doi:10.1002/pssc.201000917
Lin, Wei, Li, Shuping, Kang, Junyong (2010) Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy. Applied Physics Letters, 96 (10). 101115pp. doi:10.1063/1.3360199
Cheng, K., Degroote, S., Leys, M., Germain, M., Borghs, G. (2010) Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy. Journal of Applied Physics, 108 (7). 73522pp. doi:10.1063/1.3493115
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Ye, J. D., Pannirselvam, S., Lim, S. T., Bi, J. F., Sun, X. W., Lo, G. Q., Teo, K. L. (2010) Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 97 (11). 111908pp. doi:10.1063/1.3489101
 
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