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Peng, H. Y., Li, G. P., Ye, J. Y., Wei, Z. P., Zhang, Z., Wang, D. D., Xing, G. Z., Wu, T. (2010) Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms. Applied Physics Letters, 96 (19). 192113pp. doi:10.1063/1.3428365

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Reference TypeJournal (article/letter/editorial)
TitleElectrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms
JournalApplied Physics Letters
AuthorsPeng, H. Y.Author
Li, G. P.Author
Ye, J. Y.Author
Wei, Z. P.Author
Zhang, Z.Author
Wang, D. D.Author
Xing, G. Z.Author
Wu, T.Author
Year2010 (May 10)Volume96
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3428365Search in ResearchGate
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Mindat Ref. ID8583352Long-form Identifiermindat:1:5:8583352:4
GUID0
Full ReferencePeng, H. Y., Li, G. P., Ye, J. Y., Wei, Z. P., Zhang, Z., Wang, D. D., Xing, G. Z., Wu, T. (2010) Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms. Applied Physics Letters, 96 (19). 192113pp. doi:10.1063/1.3428365
Plain TextPeng, H. Y., Li, G. P., Ye, J. Y., Wei, Z. P., Zhang, Z., Wang, D. D., Xing, G. Z., Wu, T. (2010) Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms. Applied Physics Letters, 96 (19). 192113pp. doi:10.1063/1.3428365
In(2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing

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