Reference Type | Journal (article/letter/editorial) |
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Title | Nanoscale resistive switching and filamentary conduction in NiO thin films |
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Journal | Applied Physics Letters |
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Authors | Ye, J. Y. | Author |
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Li, Y. Q. | Author |
Gao, J. | Author |
Peng, H. Y. | Author |
Wu, S. X. | Author |
Wu, T. | Author |
Year | 2010 (September 27) | Volume | 97 |
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Issue | 13 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3494267Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8586882 | Long-form Identifier | mindat:1:5:8586882:1 |
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GUID | 0 |
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Full Reference | Ye, J. Y., Li, Y. Q., Gao, J., Peng, H. Y., Wu, S. X., Wu, T. (2010) Nanoscale resistive switching and filamentary conduction in NiO thin films. Applied Physics Letters, 97 (13). 132108pp. doi:10.1063/1.3494267 |
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Plain Text | Ye, J. Y., Li, Y. Q., Gao, J., Peng, H. Y., Wu, S. X., Wu, T. (2010) Nanoscale resistive switching and filamentary conduction in NiO thin films. Applied Physics Letters, 97 (13). 132108pp. doi:10.1063/1.3494267 |
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In | (2010, September) Applied Physics Letters Vol. 97 (13) AIP Publishing |
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