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Lee, Suyoun, Jeong, Doo Seok, Jeong, Jeung-hyun, Zhe, Wu, Park, Young-Wook, Ahn, Hyung-Woo, Cheong, Byung-ki (2010) A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5. Applied Physics Letters, 96 (2). 23501pp. doi:10.1063/1.3275756

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Reference TypeJournal (article/letter/editorial)
TitleA study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5
JournalApplied Physics Letters
AuthorsLee, SuyounAuthor
Jeong, Doo SeokAuthor
Jeong, Jeung-hyunAuthor
Zhe, WuAuthor
Park, Young-WookAuthor
Ahn, Hyung-WooAuthor
Cheong, Byung-kiAuthor
Year2010 (January 11)Volume96
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.3275756Search in ResearchGate
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Mindat Ref. ID8583478Long-form Identifiermindat:1:5:8583478:1
GUID0
Full ReferenceLee, Suyoun, Jeong, Doo Seok, Jeong, Jeung-hyun, Zhe, Wu, Park, Young-Wook, Ahn, Hyung-Woo, Cheong, Byung-ki (2010) A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5. Applied Physics Letters, 96 (2). 23501pp. doi:10.1063/1.3275756
Plain TextLee, Suyoun, Jeong, Doo Seok, Jeong, Jeung-hyun, Zhe, Wu, Park, Young-Wook, Ahn, Hyung-Woo, Cheong, Byung-ki (2010) A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5. Applied Physics Letters, 96 (2). 23501pp. doi:10.1063/1.3275756
In(2010, January) Applied Physics Letters Vol. 96 (2) AIP Publishing

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Lee, Suyoun, Jeong, Doo Seok, Jeong, Jeung-hyun, Zhe, Wu, Park, Young-Wook, Ahn, Hyung-Woo, Kim, Won Mok, Cheong, Byung-ki (2009) A study on the temperature dependence of characteristics of phase change memory devices. Applied Physics Letters, 95 (9). 93504pp. doi:10.1063/1.3211872
Wu, Zhe, Lee, Suyoun, Park, Young-Wook, Ahn, Hyung-Woo, Jeong, Doo Seok, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki (2010) Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature. Applied Physics Letters, 96 (13). 133510pp. doi:10.1063/1.3374334
Ahn, Hyung-Woo, Seok Jeong, Doo, Cheong, Byung-ki, Lee, Hosuk, Lee, Hosun, Kim, Su-dong, Shin, Sang-Yeol, Kim, Donghwan, Lee, Suyoun (2013) Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films. Applied Physics Letters, 103 (4). 42908pp. doi:10.1063/1.4816349
Lee, Suyoun, Jeong, Jeung-hyun, Wu, Zhe, Park, Young-Wook, Kim, Won Mok, Cheong, Byung-ki (2009) Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe. Journal of the Electrochemical Society, 156. doi:10.1149/1.3133252
Wu, Zhe, Zhang, Gang, Park, Youngwook, Kang, Stephen D., Lyeo, Ho-Ki, Seok Jeong, Doo, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki (2011) Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe. Applied Physics Letters, 99 (14). 143505pp. doi:10.1063/1.3641470
Jeong, Jeung-hyun, Ahn, Hyung-Woo, Lee, Suyoun, Kim, Won Mok, Ha, Jae-Geun, Cheong, Byung-ki (2009) Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials. Applied Physics Letters, 94 (1). 11902pp. doi:10.1063/1.3064916
Jeong, Doo Seok, Lim, Hyungkwang, Park, Goon-Ho, Hwang, Cheol Seong, Lee, Suyoun, Cheong, Byung-ki (2012) Threshold resistive and capacitive switching behavior in binary amorphous GeSe. Journal of Applied Physics, 111 (10). 102807pp. doi:10.1063/1.4714705
Seo, Juhee, Ahn, Hyung-Woo, Shin, Sang-yeol, Cheong, Byung-ki, Lee, Suyoun (2014) Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices. Applied Physics Letters, 104 (15). 153503pp. doi:10.1063/1.4871385
Cheong, Byung-ki, Lee, Suyoun, Jeong, Jeung-hyun, Park, Sohee, Han, Seungwu, Wu, Zhe, Ahn, Dong-Ho (2012) Fast and scalable memory characteristics of Ge-doped SbTe phase change materials. physica status solidi (b), 249 (10). 1985-1991 doi:10.1002/pssb.201200419
Kang, Tae Dong, Sirenko, Andrei, Park, Jun-Woo, Lee, Hyun Seok, Lee, Suyoun, Jeong, Jeung-hyun, Cheong, Byung-ki, Lee, Hosun (2011) Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios. Journal of the Electrochemical Society, 158. doi:10.1149/1.3532547
Kim, Sae-Jin, Choi, Jung-Hae, Lee, Seung-Cheol, Cheong, Byung-ki, Jeong, Doo Seok, Park, Chan (2010) First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5. Journal of Applied Physics, 107 (10). 103522pp. doi:10.1063/1.3428362
 
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