Wu, Zhe, Zhang, Gang, Park, Youngwook, Kang, Stephen D., Lyeo, Ho-Ki, Seok Jeong, Doo, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki (2011) Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe. Applied Physics Letters, 99 (14). 143505pp. doi:10.1063/1.3641470
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe | ||
| Journal | Applied Physics Letters | ||
| Authors | Wu, Zhe | Author | |
| Zhang, Gang | Author | ||
| Park, Youngwook | Author | ||
| Kang, Stephen D. | Author | ||
| Lyeo, Ho-Ki | Author | ||
| Seok Jeong, Doo | Author | ||
| Jeong, Jeung-hyun | Author | ||
| No, Kwangsoo | Author | ||
| Cheong, Byung-ki | Author | ||
| Year | 2011 (October 3) | Volume | 99 |
| Issue | 14 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3641470Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8596291 | Long-form Identifier | mindat:1:5:8596291:4 |
| GUID | 0 | ||
| Full Reference | Wu, Zhe, Zhang, Gang, Park, Youngwook, Kang, Stephen D., Lyeo, Ho-Ki, Seok Jeong, Doo, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki (2011) Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe. Applied Physics Letters, 99 (14). 143505pp. doi:10.1063/1.3641470 | ||
| Plain Text | Wu, Zhe, Zhang, Gang, Park, Youngwook, Kang, Stephen D., Lyeo, Ho-Ki, Seok Jeong, Doo, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki (2011) Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe. Applied Physics Letters, 99 (14). 143505pp. doi:10.1063/1.3641470 | ||
| In | (2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing | ||
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