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Wu, X., Pey, K. L., Zhang, G., Bai, P., Li, X., Liu, W. H., Raghavan, N. (2010) Electrode material dependent breakdown and recovery in advanced high-κ gate stacks. Applied Physics Letters, 96 (20). 202903pp. doi:10.1063/1.3429682

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Reference TypeJournal (article/letter/editorial)
TitleElectrode material dependent breakdown and recovery in advanced high-κ gate stacks
JournalApplied Physics Letters
AuthorsWu, X.Author
Pey, K. L.Author
Zhang, G.Author
Bai, P.Author
Li, X.Author
Liu, W. H.Author
Raghavan, N.Author
Year2010 (May 17)Volume96
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3429682Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8583672Long-form Identifiermindat:1:5:8583672:5
GUID0
Full ReferenceWu, X., Pey, K. L., Zhang, G., Bai, P., Li, X., Liu, W. H., Raghavan, N. (2010) Electrode material dependent breakdown and recovery in advanced high-κ gate stacks. Applied Physics Letters, 96 (20). 202903pp. doi:10.1063/1.3429682
Plain TextWu, X., Pey, K. L., Zhang, G., Bai, P., Li, X., Liu, W. H., Raghavan, N. (2010) Electrode material dependent breakdown and recovery in advanced high-κ gate stacks. Applied Physics Letters, 96 (20). 202903pp. doi:10.1063/1.3429682
In(2010, May) Applied Physics Letters Vol. 96 (20) AIP Publishing

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