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Wu, X., Fang, Z., Li, K., Bosman, M., Raghavan, N., Li, X., Yu, H. Y., Singh, N., Lo, G. Q., Zhang, X. X., Pey, K. L. (2011) Chemical insight into origin of forming-free resistive random-access memory devices. Applied Physics Letters, 99 (13). 133504pp. doi:10.1063/1.3645623

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Reference TypeJournal (article/letter/editorial)
TitleChemical insight into origin of forming-free resistive random-access memory devices
JournalApplied Physics Letters
AuthorsWu, X.Author
Fang, Z.Author
Li, K.Author
Bosman, M.Author
Raghavan, N.Author
Li, X.Author
Yu, H. Y.Author
Singh, N.Author
Lo, G. Q.Author
Zhang, X. X.Author
Pey, K. L.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3645623Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8596263Long-form Identifiermindat:1:5:8596263:1
GUID0
Full ReferenceWu, X., Fang, Z., Li, K., Bosman, M., Raghavan, N., Li, X., Yu, H. Y., Singh, N., Lo, G. Q., Zhang, X. X., Pey, K. L. (2011) Chemical insight into origin of forming-free resistive random-access memory devices. Applied Physics Letters, 99 (13). 133504pp. doi:10.1063/1.3645623
Plain TextWu, X., Fang, Z., Li, K., Bosman, M., Raghavan, N., Li, X., Yu, H. Y., Singh, N., Lo, G. Q., Zhang, X. X., Pey, K. L. (2011) Chemical insight into origin of forming-free resistive random-access memory devices. Applied Physics Letters, 99 (13). 133504pp. doi:10.1063/1.3645623
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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