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Schubert, Martin F. (2010) Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact. Applied Physics Letters, 96 (3). 31102pp. doi:10.1063/1.3280866

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Reference TypeJournal (article/letter/editorial)
TitlePolarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact
JournalApplied Physics Letters
AuthorsSchubert, Martin F.Author
Year2010 (January 18)Volume96
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3280866Search in ResearchGate
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Mindat Ref. ID8584833Long-form Identifiermindat:1:5:8584833:1
GUID0
Full ReferenceSchubert, Martin F. (2010) Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact. Applied Physics Letters, 96 (3). 31102pp. doi:10.1063/1.3280866
Plain TextSchubert, Martin F. (2010) Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact. Applied Physics Letters, 96 (3). 31102pp. doi:10.1063/1.3280866
In(2010, January) Applied Physics Letters Vol. 96 (3) AIP Publishing

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Schubert, Martin F. (2010) Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges. Physical Review B, 81 (3) doi:10.1103/physrevb.81.035303
Schubert, Martin F., Schubert, E. Fred (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Applied Physics Letters, 96 (13). 131102pp. doi:10.1063/1.3373610
Rottländer, P., Kohlstedt, H., Grünberg, P., Girgis, E. (2000) Ultraviolet light assisted oxidation for magnetic tunnel junctions. Journal of Applied Physics, 87 (9). 6067-6069 doi:10.1063/1.372614
Nizamoglu, Sedat, Zengin, Gulis, Demir, Hilmi Volkan (2008) Color-converting combinations of nanocrystal emitters for warm-white light generation with high color rendering index. Applied Physics Letters, 92 (3). 31102pp. doi:10.1063/1.2833693
Turski, Henryk, Bharadwaj, Shyam, Xing, Huili (Grace), Jena, Debdeep (2019) Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions. Journal of Applied Physics, 125 (20). 203104pp. doi:10.1063/1.5088041
Sharma, T. K., Towe, E. (2010) On ternary nitride substrates for visible semiconductor light-emitters. Applied Physics Letters, 96 (19). 191105pp. doi:10.1063/1.3425885
Schubert, Martin F., Chhajed, Sameer, Kim, Jong Kyu, Fred Schubert, E., Cho, Jaehee (2007) Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates. Applied Physics Letters, 91 (5). 51117pp. doi:10.1063/1.2757594
Xu, Jiuru, Schubert, Martin F., Zhu, Di, Cho, Jaehee, Schubert, E. Fred, Shim, Hyunwook, Sone, Cheolsoo (2011) Effects of polarization-field tuning in GaInN light-emitting diodes. Applied Physics Letters, 99 (4). 41105pp. doi:10.1063/1.3609783
Noemaun, Ahmed N., Schubert, Martin F., Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D. (2010) Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping. Applied Physics Letters, 96 (12). 121110pp. doi:10.1063/1.3371812
Song, June-O, Seong, Tae-Yeon (2004) Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes. Applied Physics Letters, 85 (26). 6374-6376 doi:10.1063/1.1834990
Lobo, N., Rodriguez, H., Knauer, A., Hoppe, M., Einfeldt, S., Vogt, P., Weyers, M., Kneissl, M. (2010) Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector. Applied Physics Letters, 96 (8). 81109pp. doi:10.1063/1.3334721
 
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