Ogawa, Y., Minami, F., Abate, Yohannes, Leone, Stephen R. (2010) Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy. Applied Physics Letters, 96 (6). 63107pp. doi:10.1063/1.3309692
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy | ||
Journal | Applied Physics Letters | ||
Authors | Ogawa, Y. | Author | |
Minami, F. | Author | ||
Abate, Yohannes | Author | ||
Leone, Stephen R. | Author | ||
Year | 2010 (February 8) | Volume | 96 |
Issue | 6 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3309692Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8585502 | Long-form Identifier | mindat:1:5:8585502:1 |
GUID | 0 | ||
Full Reference | Ogawa, Y., Minami, F., Abate, Yohannes, Leone, Stephen R. (2010) Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy. Applied Physics Letters, 96 (6). 63107pp. doi:10.1063/1.3309692 | ||
Plain Text | Ogawa, Y., Minami, F., Abate, Yohannes, Leone, Stephen R. (2010) Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy. Applied Physics Letters, 96 (6). 63107pp. doi:10.1063/1.3309692 | ||
In | (2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing |
See Also
These are possibly similar items as determined by title/reference text matching only.