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Hashemi, Pouya, Kim, Meekyung, Hennessy, John, Gomez, Leonardo, Antoniadis, Dimitri A., Hoyt, Judy L. (2010) Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors. Applied Physics Letters, 96 (6). 63109pp. doi:10.1063/1.3318249

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Reference TypeJournal (article/letter/editorial)
TitleWidth-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
JournalApplied Physics Letters
AuthorsHashemi, PouyaAuthor
Kim, MeekyungAuthor
Hennessy, JohnAuthor
Gomez, LeonardoAuthor
Antoniadis, Dimitri A.Author
Hoyt, Judy L.Author
Year2010 (February 8)Volume96
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3318249Search in ResearchGate
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Mindat Ref. ID8585566Long-form Identifiermindat:1:5:8585566:9
GUID0
Full ReferenceHashemi, Pouya, Kim, Meekyung, Hennessy, John, Gomez, Leonardo, Antoniadis, Dimitri A., Hoyt, Judy L. (2010) Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors. Applied Physics Letters, 96 (6). 63109pp. doi:10.1063/1.3318249
Plain TextHashemi, Pouya, Kim, Meekyung, Hennessy, John, Gomez, Leonardo, Antoniadis, Dimitri A., Hoyt, Judy L. (2010) Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors. Applied Physics Letters, 96 (6). 63109pp. doi:10.1063/1.3318249
In(2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing

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Hashemi, Pouya, Gomez, Leonardo, Hoyt, Judy L., Robertson, Michael D., Canonico, Michael (2007) Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained-Si heterostructures on insulator. Applied Physics Letters, 91 (8). 83109pp. doi:10.1063/1.2772775
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