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Lubow, Abigail, Ismail-Beigi, Sohrab, Ma, T. P. (2010) Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels. Applied Physics Letters, 96 (12). 122105pp. doi:10.1063/1.3367708

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Reference TypeJournal (article/letter/editorial)
TitleComparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
JournalApplied Physics Letters
AuthorsLubow, AbigailAuthor
Ismail-Beigi, SohrabAuthor
Ma, T. P.Author
Year2010 (March 22)Volume96
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3367708Search in ResearchGate
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Mindat Ref. ID8582204Long-form Identifiermindat:1:5:8582204:1
GUID0
Full ReferenceLubow, Abigail, Ismail-Beigi, Sohrab, Ma, T. P. (2010) Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels. Applied Physics Letters, 96 (12). 122105pp. doi:10.1063/1.3367708
Plain TextLubow, Abigail, Ismail-Beigi, Sohrab, Ma, T. P. (2010) Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels. Applied Physics Letters, 96 (12). 122105pp. doi:10.1063/1.3367708
In(2010, March) Applied Physics Letters Vol. 96 (12) AIP Publishing

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Lee, Minjoo L., Fitzgerald, Eugene A., Bulsara, Mayank T., Currie, Matthew T., Lochtefeld, Anthony (2005) Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 97 (1). 11101pp. doi:10.1063/1.1819976
Hashemi, Pouya, Kim, Meekyung, Hennessy, John, Gomez, Leonardo, Antoniadis, Dimitri A., Hoyt, Judy L. (2010) Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors. Applied Physics Letters, 96 (6). 63109pp. doi:10.1063/1.3318249
Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P. (2014) InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Physics Letters, 105 (18). 183504pp. doi:10.1063/1.4901170
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Sano, Eiichi (2003) A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator. Japanese Journal of Applied Physics, 42. 6346-6353 doi:10.1143/jjap.42.6346
Ghosh, Ruby N., Griffing, Bruce, Ballantyne, Joseph M. (1986) Monolithic integration of GaAs light‐emitting diodes and Si metal‐oxide‐semiconductor field‐effect transistors. Applied Physics Letters, 48 (5). 370-371 doi:10.1063/1.96555
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