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Zhou, Xin, Uchida, Ken, Oda, Shunri (2010) Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. Applied Physics Letters, 96 (9). 92112pp. doi:10.1063/1.3294329

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Reference TypeJournal (article/letter/editorial)
TitleCurrent fluctuations in three-dimensionally stacked Si nanocrystals thin films
JournalApplied Physics Letters
AuthorsZhou, XinAuthor
Uchida, KenAuthor
Oda, ShunriAuthor
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3294329Search in ResearchGate
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Mindat Ref. ID8585973Long-form Identifiermindat:1:5:8585973:5
GUID0
Full ReferenceZhou, Xin, Uchida, Ken, Oda, Shunri (2010) Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. Applied Physics Letters, 96 (9). 92112pp. doi:10.1063/1.3294329
Plain TextZhou, Xin, Uchida, Ken, Oda, Shunri (2010) Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. Applied Physics Letters, 96 (9). 92112pp. doi:10.1063/1.3294329
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Zhou, Xin, Uchida, Ken, Mizuta, Hiroshi, Oda, Shunri (2009) Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films. Journal of Applied Physics, 105 (12). 124518pp. doi:10.1063/1.3151688
Zhou, Xin, Uchida, Ken, Mizuta, Hiroshi, Oda, Shunri (2009) Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. Journal of Applied Physics, 106 (4). 44511pp. doi:10.1063/1.3204669
Zhou, Xin, Usami, Kouichi, Rafiq, M. A., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, Shunri (2008) Influence of nanocrystal size on the transport properties of Si nanocrystals. Journal of Applied Physics, 104 (2). 24518pp. doi:10.1063/1.2952036
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Nakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri (2011) Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching. Japanese Journal of Applied Physics, 50. 115002 doi:10.1143/jjap.50.115002
Nakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri (2011) Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching. Japanese Journal of Applied Physics, 50 (11) 115002 doi:10.7567/jjap.50.115002
Nagami, Tasuku, Tsuchiya, Yoshishige, Uchida, Ken, Mizuta, Hiroshi, Oda, Shunri (2010) Scaling Analysis of Nanoelectromechanical Memory Devices. Japanese Journal of Applied Physics, 49 (4) 44304 doi:10.1143/jjap.49.044304
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Fukumoto, Keiki, Seyhan, Ayse, Onda, Ken, Oda, Shunri, Koshihara, Shin-ya (2019) Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface. Applied Physics Letters, 115 (5). 53105pp. doi:10.1063/1.5097611
 
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