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You, Hee-Wook, Cho, Won-Ju (2010) Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications. Applied Physics Letters, 96 (9). 93506pp. doi:10.1063/1.3337103

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Reference TypeJournal (article/letter/editorial)
TitleCharge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications
JournalApplied Physics Letters
AuthorsYou, Hee-WookAuthor
Cho, Won-JuAuthor
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3337103Search in ResearchGate
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Mindat Ref. ID8586056Long-form Identifiermindat:1:5:8586056:4
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Full ReferenceYou, Hee-Wook, Cho, Won-Ju (2010) Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications. Applied Physics Letters, 96 (9). 93506pp. doi:10.1063/1.3337103
Plain TextYou, Hee-Wook, Cho, Won-Ju (2010) Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications. Applied Physics Letters, 96 (9). 93506pp. doi:10.1063/1.3337103
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Park, Goon-Ho, Cho, Won-Ju (2010) Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application. Applied Physics Letters, 96 (4). 43503pp. doi:10.1063/1.3293291
Uk Lee, Dong, Jun Lee, Hyo, Kyu Kim, Eun, You, Hee-Wook, Cho, Won-Ju (2012) Low operation voltage and high thermal stability of a WSi2nanocrystal memory device using an Al2O3/HfO2/Al2O3tunnel layer. Applied Physics Letters, 100 (7). 72901pp. doi:10.1063/1.3684967
Kim, Eunkyeom, Yim, Taekyung, An, Seungman, Cho, Won-Ju, Park, Kyoungwan (2010) Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory. Applied Physics Letters, 97 (22). 222107pp. doi:10.1063/1.3521260
You, Hee-Wook, Son, Jung-Woo, Cho, Won-Ju (2011) Engineering of tunnel barrier for highly integrated nonvolatile memory applications. Applied Physics A, 102. 921-926 doi:10.1007/s00339-011-6274-7
Jung, Myung-Ho, Kim, Kwan-Su, Park, Goon-Ho, Cho, Won-Ju (2009) Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications. Applied Physics Letters, 94 (5). 53508pp. doi:10.1063/1.3078279
Chang, M., Hwang, H., Jeon, S. (2010) Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices. Applied Physics Letters, 96 (5). 52106pp. doi:10.1063/1.3295697
Park, Jong Kyung, Park, Youngmin, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin (2010) Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device. Applied Physics Letters, 96 (22). 222902pp. doi:10.1063/1.3442502
Lee, Dong Uk, Lee, Hyo Jun, Kim, Eun Kyu, You, Hee-Wook, Cho, Won-Ju (2012) Speed Enhancement of WSi2Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06fe13
Pan, Tung-Ming, Yu, Te-Yi (2008) Silicon-oxide-nitride-oxide-silicon-type flash memory with a high-k NdTiO3 charge trapping layer. Applied Physics Letters, 92 (11). 112906pp. doi:10.1063/1.2898215
Lee, Dong Uk, Lee, Hyo Jun, Kim, Eun Kyu, You, Hee-Wook, Cho, Won-Ju (2012) Speed Enhancement of WSi$_{2}$ Nanocrystal Memory with Barrier-Engineered Si$_{3}$N$_{4}$/HfAlO Tunnel Layer. Japanese Journal of Applied Physics, 51. 6 doi:10.1143/jjap.51.06fe13
Chang, Seongpil, Song, Yong-Won, Lee, Sanggyu, Lee, Sang Yeol, Ju, Byeong-Kwon (2008) Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure. Applied Physics Letters, 92 (19). 192104pp. doi:10.1063/1.2924769
 
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