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Hsieh, E. R., Chung, Steve S. (2010) The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (9). 93501pp. doi:10.1063/1.3340926

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Reference TypeJournal (article/letter/editorial)
TitleThe proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors
JournalApplied Physics Letters
AuthorsHsieh, E. R.Author
Chung, Steve S.Author
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3340926Search in ResearchGate
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Mindat Ref. ID8586088Long-form Identifiermindat:1:5:8586088:3
GUID0
Full ReferenceHsieh, E. R., Chung, Steve S. (2010) The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (9). 93501pp. doi:10.1063/1.3340926
Plain TextHsieh, E. R., Chung, Steve S. (2010) The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (9). 93501pp. doi:10.1063/1.3340926
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Hsieh, E. R., Chung, Steve S. (2014) The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 104 (20). 203503pp. doi:10.1063/1.4879244
Hsieh, E. R., Chung, Steve S. (2012) The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors. Applied Physics Letters, 101 (22). 223505pp. doi:10.1063/1.4768687
Srinivasan, R., Bhat, Navakanta (2006) Effect of gate-drain/source overlap on the noise in 90nm N-channel metal oxide semiconductor field effect transistors. Journal of Applied Physics, 99 (8). 84505pp. doi:10.1063/1.2189217
Hsieh, E. R., Chung, Steve S. (2016) A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistors. Journal of Applied Physics, 119 (20). 204502pp. doi:10.1063/1.4952987
Koh, Shao-Ming, Samudra, Ganesh S., Yeo, Yee-Chia (2010) Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters, 97 (3). 32111pp. doi:10.1063/1.3465661
Chen, Jone F., Tsao, Chih-Pin (2003) Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 83 (9). 1872-1874 doi:10.1063/1.1605247
Ma, X. H., Cao, Y. R., Gao, H. X., Chen, H. F., Hao, Y. (2009) Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 95 (15). 152107pp. doi:10.1063/1.3250435
Mirabedini, Mohammad R., Goodwin‐Johansson, Scott H., Massoud, Hisham Z. (1994) New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors. Applied Physics Letters, 65 (6). 728-730 doi:10.1063/1.113014
Shin, Mincheol (2010) Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 97 (9). 92108pp. doi:10.1063/1.3485062
Lee, Ju-Wan, Shin, Hyungcheol, Lee, Jong-Ho (2010) Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (4). 43502pp. doi:10.1063/1.3292204
Dubois, Emmanuel, Larrieu, Guilhem (2004) Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors. Journal of Applied Physics, 96 (1). 729-737 doi:10.1063/1.1756215
 
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