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Lorenz, K., Alves, E., Roqan, I. S., O’Donnell, K. P., Nishikawa, A., Fujiwara, Y., Boćkowski, M. (2010) Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy. Applied Physics Letters, 97 (11). 111911pp. doi:10.1063/1.3489103

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Reference TypeJournal (article/letter/editorial)
TitleLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsLorenz, K.Author
Alves, E.Author
Roqan, I. S.Author
O’Donnell, K. P.Author
Nishikawa, A.Author
Fujiwara, Y.Author
Boćkowski, M.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3489103Search in ResearchGate
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Mindat Ref. ID8586530Long-form Identifiermindat:1:5:8586530:1
GUID0
Full ReferenceLorenz, K., Alves, E., Roqan, I. S., O’Donnell, K. P., Nishikawa, A., Fujiwara, Y., Boćkowski, M. (2010) Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy. Applied Physics Letters, 97 (11). 111911pp. doi:10.1063/1.3489103
Plain TextLorenz, K., Alves, E., Roqan, I. S., O’Donnell, K. P., Nishikawa, A., Fujiwara, Y., Boćkowski, M. (2010) Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy. Applied Physics Letters, 97 (11). 111911pp. doi:10.1063/1.3489103
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Otabara, T., Tatebayashi, J., Yoshimura, T., Timmerman, D., Ichikawa, S., Fujiwara, Y. (2023) Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acbb0f
Shimada, K., Terai, Y., Takemoto, S., Hidaka, K., Fujiwara, Y., Suzuki, M., Tonouchi, M. (2008) Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy. Applied Physics Letters, 92 (11). 111115pp. doi:10.1063/1.2901025
Koizumi, A., Fujiwara, Y., Urakami, A., Inoue, K., Yoshikane, T., Takeda, Y. (2003) Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy. Applied Physics Letters, 83 (22). 4521-4523 doi:10.1063/1.1630165
Roqan, I. S., O’Donnell, K. P., Martin, R. W., Trager-Cowan, C., Matias, V., Vantomme, A., Lorenz, K., Alves, E., Watson, I. M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 83508pp. doi:10.1063/1.3245386
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