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Döscher, Henning, Dobrich, Anja, Brückner, Sebastian, Kleinschmidt, Peter, Hannappel, Thomas (2010) Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters, 97 (15). 151905pp. doi:10.1063/1.3497992

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Reference TypeJournal (article/letter/editorial)
TitleSi(100) surfaces in a hydrogen-based process ambient
JournalApplied Physics Letters
AuthorsDöscher, HenningAuthor
Dobrich, AnjaAuthor
Brückner, SebastianAuthor
Kleinschmidt, PeterAuthor
Hannappel, ThomasAuthor
Year2010 (October 11)Volume97
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.3497992Search in ResearchGate
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Mindat Ref. ID8587229Long-form Identifiermindat:1:5:8587229:5
GUID0
Full ReferenceDöscher, Henning, Dobrich, Anja, Brückner, Sebastian, Kleinschmidt, Peter, Hannappel, Thomas (2010) Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters, 97 (15). 151905pp. doi:10.1063/1.3497992
Plain TextDöscher, Henning, Dobrich, Anja, Brückner, Sebastian, Kleinschmidt, Peter, Hannappel, Thomas (2010) Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters, 97 (15). 151905pp. doi:10.1063/1.3497992
In(2010, October) Applied Physics Letters Vol. 97 (15) AIP Publishing

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Brückner, Sebastian, Döscher, Henning, Kleinschmidt, Peter, Supplie, Oliver, Dobrich, Anja, Hannappel, Thomas (2012) Anomalous double-layer step formation on Si(100) in hydrogen process ambient. Physical Review B, 86 (19) doi:10.1103/physrevb.86.195310
Brückner, Sebastian, Döscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2011) In situ investigation of hydrogen interacting with Si(100). Applied Physics Letters, 98 (21). 211909pp. doi:10.1063/1.3593195
Döscher, Henning, Brückner, Sebastian, Dobrich, Anja, Höhn, Christian, Kleinschmidt, Peter, Hannappel, Thomas (2011) Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. Journal of Crystal Growth, 315 (1). 10-15 doi:10.1016/j.jcrysgro.2010.07.017
Brückner, Sebastian, Supplie, Oliver, Dobrich, Anja, Kleinschmidt, Peter, Hannappel, Thomas (2018) Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics. physica status solidi (b), 255 (4). 1700493pp. doi:10.1002/pssb.201700493
Brückner, Sebastian, Supplie, Oliver, Dobrich, Anja, Kleinschmidt, Peter, Hannappel, Thomas (2018) Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018). physica status solidi (b), 255 (4). 1870117pp. doi:10.1002/pssb.201870117
Brückner, Sebastian, Kleinschmidt, Peter, Supplie, Oliver, Döscher, Henning, Hannappel, Thomas (2013) Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient. New Journal of Physics, 15. 113049pp. doi:10.1088/1367-2630/15/11/113049
Brückner, Sebastian, Supplie, Oliver, Barrigón, Enrique, Luczak, Johannes, Kleinschmidt, Peter, Rey-Stolle, Ignacio, Döscher, Henning, Hannappel, Thomas (2012) In situ control of As dimer orientation on Ge(100) surfaces. Applied Physics Letters, 101 (12). 121602pp. doi:10.1063/1.4754122
Paszuk, Agnieszka, Supplie, Oliver, Nandy, Manali, Brückner, Sebastian, Dobrich, Anja, Kleinschmidt, Peter, Kim, Boram, Nakano, Yoshiaki, Sugiyama, Masakazu, Hannappel, Thomas (2018) Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience. Applied Surface Science, 462. 1002-1007 doi:10.1016/j.apsusc.2018.07.181
Barrigón, Enrique, Brückner, Sebastian, Supplie, Oliver, Kleinschmidt, Peter, Rey-Stolle, Ignacio, Hannappel, Thomas (2013) Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces. Applied Physics Letters, 102 (11). 111608pp. doi:10.1063/1.4798248
Döscher, Henning, Brückner, Sebastian, Hannappel, Thomas (2011) Investigation of oxide removal from Si(100) substrates in dependence of the MOVPE process gas ambient. Journal of Crystal Growth, 318 (1). 563-569 doi:10.1016/j.jcrysgro.2010.11.087
Döscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2010) Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment. Applied Surface Science, 257. 574-580 doi:10.1016/j.apsusc.2010.07.035
 
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