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Döscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2010) Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment. Applied Surface Science, 257. 574-580 doi:10.1016/j.apsusc.2010.07.035

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Reference TypeJournal (article/letter/editorial)
TitleAtomic surface structure of Si(100) substrates prepared in a chemical vapor environment
JournalApplied Surface Science
AuthorsDöscher, HenningAuthor
Kleinschmidt, PeterAuthor
Hannappel, ThomasAuthor
Year2010 (November)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.07.035Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9916352Long-form Identifiermindat:1:5:9916352:9
GUID0
Full ReferenceDöscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2010) Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment. Applied Surface Science, 257. 574-580 doi:10.1016/j.apsusc.2010.07.035
Plain TextDöscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2010) Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment. Applied Surface Science, 257. 574-580 doi:10.1016/j.apsusc.2010.07.035
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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Döscher, Henning, Brückner, Sebastian, Dobrich, Anja, Höhn, Christian, Kleinschmidt, Peter, Hannappel, Thomas (2011) Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. Journal of Crystal Growth, 315 (1). 10-15 doi:10.1016/j.jcrysgro.2010.07.017
Döscher, Henning, Dobrich, Anja, Brückner, Sebastian, Kleinschmidt, Peter, Hannappel, Thomas (2010) Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters, 97 (15). 151905pp. doi:10.1063/1.3497992
Brückner, Sebastian, Döscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2011) In situ investigation of hydrogen interacting with Si(100). Applied Physics Letters, 98 (21). 211909pp. doi:10.1063/1.3593195
Bohlemann, Chris Yannic, Flötotto, Aaron, Paszuk, Agnieszka, Nandy, Manali, Großmann, Max, Romanyuk, Oleksandr, Hanke, Kai Daniel, Gieß, Aaron, Kleinschmidt, Peter, Runge, Erich, Hannappel, Thomas (2024) Surface structure of MOVPE-prepared As-modified Si(100) substrates. Applied Surface Science, 675. 160879 doi:10.1016/j.apsusc.2024.160879
Brückner, Sebastian, Döscher, Henning, Kleinschmidt, Peter, Supplie, Oliver, Dobrich, Anja, Hannappel, Thomas (2012) Anomalous double-layer step formation on Si(100) in hydrogen process ambient. Physical Review B, 86 (19) doi:10.1103/physrevb.86.195310
Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T. (2017) Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. Applied Surface Science, 392. 1043-1048 doi:10.1016/j.apsusc.2016.09.081
Döscher, Henning, Hannappel, Thomas (2010) In situreflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si(100). Journal of Applied Physics, 107 (12). 123523pp. doi:10.1063/1.3357391
Brückner, Sebastian, Kleinschmidt, Peter, Supplie, Oliver, Döscher, Henning, Hannappel, Thomas (2013) Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient. New Journal of Physics, 15. 113049pp. doi:10.1088/1367-2630/15/11/113049
Supplie, Oliver, Brückner, Sebastian, Romanyuk, Oleksandr, Döscher, Henning, Höhn, Christian, May, Matthias M., Kleinschmidt, Peter, Grosse, Frank, Hannappel, Thomas (2014) Atomic scale analysis of the GaP/Si(100) heterointerface byin situreflection anisotropy spectroscopy andab initiodensity functional theory. Physical Review B, 90 (23) doi:10.1103/physrevb.90.235301
Paszuk, Agnieszka, Supplie, Oliver, Nandy, Manali, Brückner, Sebastian, Dobrich, Anja, Kleinschmidt, Peter, Kim, Boram, Nakano, Yoshiaki, Sugiyama, Masakazu, Hannappel, Thomas (2018) Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience. Applied Surface Science, 462. 1002-1007 doi:10.1016/j.apsusc.2018.07.181
Brückner, Sebastian, Supplie, Oliver, Barrigón, Enrique, Luczak, Johannes, Kleinschmidt, Peter, Rey-Stolle, Ignacio, Döscher, Henning, Hannappel, Thomas (2012) In situ control of As dimer orientation on Ge(100) surfaces. Applied Physics Letters, 101 (12). 121602pp. doi:10.1063/1.4754122
 
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