Vote for your favorite mineral in #MinCup25! - Cuprosklodowskite vs. Ikaite
It's radioactive #cuprosklodowskite vs ephemeral #ikaite for today's match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T. (2017) Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. Applied Surface Science, 392. 1043-1048 doi:10.1016/j.apsusc.2016.09.081

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
JournalApplied Surface Science
AuthorsZhao, W.Author
Steidl, M.Author
Paszuk, A.Author
Brückner, S.Author
Dobrich, A.Author
Supplie, O.Author
Kleinschmidt, P.Author
Hannappel, T.Author
Year2017 (January)Volume392
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2016.09.081Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9929529Long-form Identifiermindat:1:5:9929529:9
GUID0
Full ReferenceZhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T. (2017) Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. Applied Surface Science, 392. 1043-1048 doi:10.1016/j.apsusc.2016.09.081
Plain TextZhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T. (2017) Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. Applied Surface Science, 392. 1043-1048 doi:10.1016/j.apsusc.2016.09.081
In(n.d.) Applied Surface Science Vol. 392. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Paszuk, A., Brückner, S., Steidl, M., Zhao, W., Dobrich, A., Supplie, O., Kleinschmidt, P., Prost, W., Hannappel, T. (2015) Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth. Applied Physics Letters, 106 (23). 231601pp. doi:10.1063/1.4922275
Paszuk, Agnieszka, Dobrich, Anja, Koppka, Christian, Brückner, Sebastian, Duda, Marek, Kleinschmidt, Peter, Supplie, Oliver, Hannappel, Thomas (2017) In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient. Journal of Crystal Growth, 464. 14-19 doi:10.1016/j.jcrysgro.2016.11.109
Kleinschmidt, P., Mutombo, P., Berthold, T., Paszuk, A., Steidl, M., Ecke, G., Nägelein, A., Koppka, C., Supplie, O., Krischok, S., Romanyuk, O., Himmerlich, M., Hannappel, T. (2020) Atomic surface structure of MOVPE-prepared GaP(1 1 1)B. Applied Surface Science, 534. 147346pp. doi:10.1016/j.apsusc.2020.147346
Paszuk, Agnieszka, Supplie, Oliver, Nandy, Manali, Brückner, Sebastian, Dobrich, Anja, Kleinschmidt, Peter, Kim, Boram, Nakano, Yoshiaki, Sugiyama, Masakazu, Hannappel, Thomas (2018) Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience. Applied Surface Science, 462. 1002-1007 doi:10.1016/j.apsusc.2018.07.181
Paszuk, Agnieszka, Supplie, Oliver, Brückner, Sebastian, Barrigón, Enrique, May, Matthias M., Nandy, Manali, Gieß, Aaron, Dobrich, Anja, Kleinschmidt, Peter, Rey-Stolle, Ignacio, Hannappel, Thomas (2021) Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals. Applied Surface Science, 565. 150513pp. doi:10.1016/j.apsusc.2021.150513
Döscher, Henning, Kleinschmidt, Peter, Hannappel, Thomas (2010) Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment. Applied Surface Science, 257. 574-580 doi:10.1016/j.apsusc.2010.07.035
Brückner, Sebastian, Döscher, Henning, Kleinschmidt, Peter, Supplie, Oliver, Dobrich, Anja, Hannappel, Thomas (2012) Anomalous double-layer step formation on Si(100) in hydrogen process ambient. Physical Review B, 86 (19) doi:10.1103/physrevb.86.195310
Brückner, Sebastian, Supplie, Oliver, Dobrich, Anja, Kleinschmidt, Peter, Hannappel, Thomas (2018) Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics. physica status solidi (b), 255 (4). 1700493pp. doi:10.1002/pssb.201700493
Döscher, Henning, Dobrich, Anja, Brückner, Sebastian, Kleinschmidt, Peter, Hannappel, Thomas (2010) Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters, 97 (15). 151905pp. doi:10.1063/1.3497992
Döscher, Henning, Brückner, Sebastian, Dobrich, Anja, Höhn, Christian, Kleinschmidt, Peter, Hannappel, Thomas (2011) Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. Journal of Crystal Growth, 315 (1). 10-15 doi:10.1016/j.jcrysgro.2010.07.017
Romanyuk, O., Gordeev, I., Paszuk, A., Supplie, O., Stoeckmann, J.P., Houdkova, J., Ukraintsev, E., Bartoš, I., Jiříček, P., Hannappel, T. (2020) GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering. Applied Surface Science, 514. 145903pp. doi:10.1016/j.apsusc.2020.145903
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 14, 2025 23:08:08
Go to top of page