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Chen, Z. T., Wang, L., Yang, X. L., Wang, C. D., Zhang, G. Y. (2010) Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1−xMnxN. Applied Physics Letters, 97 (22). 222108pp. doi:10.1063/1.3521278

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1−xMnxN
JournalApplied Physics Letters
AuthorsChen, Z. T.Author
Wang, L.Author
Yang, X. L.Author
Wang, C. D.Author
Zhang, G. Y.Author
Year2010 (November 29)Volume97
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3521278Search in ResearchGate
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Mindat Ref. ID8588614Long-form Identifiermindat:1:5:8588614:6
GUID0
Full ReferenceChen, Z. T., Wang, L., Yang, X. L., Wang, C. D., Zhang, G. Y. (2010) Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1−xMnxN. Applied Physics Letters, 97 (22). 222108pp. doi:10.1063/1.3521278
Plain TextChen, Z. T., Wang, L., Yang, X. L., Wang, C. D., Zhang, G. Y. (2010) Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1−xMnxN. Applied Physics Letters, 97 (22). 222108pp. doi:10.1063/1.3521278
In(2010, November) Applied Physics Letters Vol. 97 (22) AIP Publishing

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Yang, X L, Chen, Z T, Zhao, L B, Zhu, W X, Wang, C D, Pei, X D, Zhang, G Y (2008) Structural, optical and magnetic properties of Ga1−xMnxN films grown by MOCVD. Journal of Physics D: Applied Physics, 41. 245004pp. doi:10.1088/0022-3727/41/24/245004
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