Devloo-Casier, K., Dendooven, J., Ludwig, K. F., Lekens, G., D’Haen, J., Detavernier, C. (2011) In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates. Applied Physics Letters, 98 (23). 231905pp. doi:10.1063/1.3598433
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates | ||
| Journal | Applied Physics Letters | ||
| Authors | Devloo-Casier, K. | Author | |
| Dendooven, J. | Author | ||
| Ludwig, K. F. | Author | ||
| Lekens, G. | Author | ||
| D’Haen, J. | Author | ||
| Detavernier, C. | Author | ||
| Year | 2011 (June 6) | Volume | 98 |
| Issue | 23 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3598433Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8593642 | Long-form Identifier | mindat:1:5:8593642:3 |
| GUID | 0 | ||
| Full Reference | Devloo-Casier, K., Dendooven, J., Ludwig, K. F., Lekens, G., D’Haen, J., Detavernier, C. (2011) In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates. Applied Physics Letters, 98 (23). 231905pp. doi:10.1063/1.3598433 | ||
| Plain Text | Devloo-Casier, K., Dendooven, J., Ludwig, K. F., Lekens, G., D’Haen, J., Detavernier, C. (2011) In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates. Applied Physics Letters, 98 (23). 231905pp. doi:10.1063/1.3598433 | ||
| In | (2011, June) Applied Physics Letters Vol. 98 (23) AIP Publishing | ||
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