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Zheng, X. H., Huang, A. P., Xiao, Z. S., Wang, M., Liu, X. Y., Wu, Z. W., Chu, Paul K. (2011) Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack. Applied Physics Letters, 99 (13). 131914pp. doi:10.1063/1.3643517

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Reference TypeJournal (article/letter/editorial)
TitleDiffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack
JournalApplied Physics Letters
AuthorsZheng, X. H.Author
Huang, A. P.Author
Xiao, Z. S.Author
Wang, M.Author
Liu, X. Y.Author
Wu, Z. W.Author
Chu, Paul K.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3643517Search in ResearchGate
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Mindat Ref. ID8596186Long-form Identifiermindat:1:5:8596186:3
GUID0
Full ReferenceZheng, X. H., Huang, A. P., Xiao, Z. S., Wang, M., Liu, X. Y., Wu, Z. W., Chu, Paul K. (2011) Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack. Applied Physics Letters, 99 (13). 131914pp. doi:10.1063/1.3643517
Plain TextZheng, X. H., Huang, A. P., Xiao, Z. S., Wang, M., Liu, X. Y., Wu, Z. W., Chu, Paul K. (2011) Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack. Applied Physics Letters, 99 (13). 131914pp. doi:10.1063/1.3643517
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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