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Tanvir Hasan, Md., Tokuda, Hirokuni, Kuzuhara, Masaaki (2011) Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 99 (13). 132102pp. doi:10.1063/1.3644161

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Reference TypeJournal (article/letter/editorial)
TitleSurface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
JournalApplied Physics Letters
AuthorsTanvir Hasan, Md.Author
Tokuda, HirokuniAuthor
Kuzuhara, MasaakiAuthor
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3644161Search in ResearchGate
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Mindat Ref. ID8596206Long-form Identifiermindat:1:5:8596206:6
GUID0
Full ReferenceTanvir Hasan, Md., Tokuda, Hirokuni, Kuzuhara, Masaaki (2011) Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 99 (13). 132102pp. doi:10.1063/1.3644161
Plain TextTanvir Hasan, Md., Tokuda, Hirokuni, Kuzuhara, Masaaki (2011) Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 99 (13). 132102pp. doi:10.1063/1.3644161
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki (2012) Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures. Applied Physics Letters, 101 (26). 262104pp. doi:10.1063/1.4773511
Tokuda, Hirokuni, Kojima, Toshikazu, Kuzuhara, Masaaki (2012) A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures. Applied Physics Letters, 101 (8). 82111pp. doi:10.1063/1.4748169
Minj, A., Cavalcoli, D., Cavallini, A. (2010) Indium segregation in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 97 (13). 132114pp. doi:10.1063/1.3489433
Kodama, Kazuki, Tokuda, Hirokuni, Kuzuhara, Masaaki (2013) A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation. Journal of Applied Physics, 114 (4). 44509pp. doi:10.1063/1.4817028
Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki (2020) Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs. Japanese Journal of Applied Physics, 59 (8) 84002 doi:10.35848/1347-4065/aba329
Yamamoto, Akio, Kodama, Kazuki, Hasan, Md. Tanvir, Shigekawa, Naoteru, Kuzuhara, Masaaki (2015) MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells. Japanese Journal of Applied Physics, 54 (8) 8 doi:10.7567/jjap.54.08ka12
Tokuda, Hirokuni, Suzuki, Kosuke, Asubar, Joel T., Kuzuhara, Masaaki (2018) Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe. Japanese Journal of Applied Physics, 57 (7) 71001 doi:10.7567/jjap.57.071001
Kuzuhara, Masaaki, Asubar, Joel T., Tokuda, Hirokuni (2016) AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation. Japanese Journal of Applied Physics, 55 (7) 70101 doi:10.7567/jjap.55.070101
Tokuda, Hirokuni, Harada, Sayaka, Asubar, Joel T., Kuzuhara, Masaaki (2019) Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes. Japanese Journal of Applied Physics, 58 (10) 106503 doi:10.7567/1347-4065/ab3d11
Liu, Jiangnan; Kezer, Pat; Hasan, Md Tanvir; Wang, Ding; Mondal, Shubham; Tanim, Md Mehedi Hasan; Zhang, Jie; Wang, Danhao; Sun, Kai; Heron, John; et al. (2025) Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier. Applied Physics Letters, 127 (5). doi:10.1063/5.0266966
Tokuda, H., Yamazaki, J., Kuzuhara, M. (2010) High temperature electron transport properties in AlGaN/GaN heterostructures. Journal of Applied Physics, 108 (10). 104509pp. doi:10.1063/1.3514079
 
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