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Ratcliff, C., Grassman, T. J., Carlin, J. A., Ringel, S. A. (2011) High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 99 (14). 141905pp. doi:10.1063/1.3644956

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Reference TypeJournal (article/letter/editorial)
TitleHigh temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsRatcliff, C.Author
Grassman, T. J.Author
Carlin, J. A.Author
Ringel, S. A.Author
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3644956Search in ResearchGate
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Mindat Ref. ID8596331Long-form Identifiermindat:1:5:8596331:1
GUID0
Full ReferenceRatcliff, C., Grassman, T. J., Carlin, J. A., Ringel, S. A. (2011) High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 99 (14). 141905pp. doi:10.1063/1.3644956
Plain TextRatcliff, C., Grassman, T. J., Carlin, J. A., Ringel, S. A. (2011) High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 99 (14). 141905pp. doi:10.1063/1.3644956
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

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Andrews, D. A., Davey, S. T., Tuppen, C. G., Wakefield, B., Davies, G. J. (1988) Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy. Applied Physics Letters, 52 (10). 816-818 doi:10.1063/1.99293
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