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Lin, Y., Carlin, J. A., Arehart, A. R., Carlin, A. M., Ringel, S. A. (2007) High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. Applied Physics Letters, 90 (1). 12115pp. doi:10.1063/1.2430403

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Reference TypeJournal (article/letter/editorial)
TitleHigh-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy
JournalApplied Physics Letters
AuthorsLin, Y.Author
Carlin, J. A.Author
Arehart, A. R.Author
Carlin, A. M.Author
Ringel, S. A.Author
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2430403Search in ResearchGate
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Mindat Ref. ID8552657Long-form Identifiermindat:1:5:8552657:2
GUID0
Full ReferenceLin, Y., Carlin, J. A., Arehart, A. R., Carlin, A. M., Ringel, S. A. (2007) High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. Applied Physics Letters, 90 (1). 12115pp. doi:10.1063/1.2430403
Plain TextLin, Y., Carlin, J. A., Arehart, A. R., Carlin, A. M., Ringel, S. A. (2007) High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. Applied Physics Letters, 90 (1). 12115pp. doi:10.1063/1.2430403
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Lin, Y., Arehart, A. R., Carlin, A. M., Ringel, S. A. (2008) Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis. Applied Physics Letters, 93 (6). 62109pp. doi:10.1063/1.2970045
Carlin, J. F., Houdré, R., Rudra, A., Ilegems, M. (1991) Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 59 (23). 3018-3020 doi:10.1063/1.105803
NAKATA, Yoshiaki, UEDA, Osamu, FUJII, Toshio (1991) High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l249
Zhang, Z., Hurni, C. A., Arehart, A. R., Yang, J., Myers, R. C., Speck, J. S., Ringel, S. A. (2012) Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy. Applied Physics Letters, 100 (5). 52114pp. doi:10.1063/1.3682528
Ratcliff, C., Grassman, T. J., Carlin, J. A., Ringel, S. A. (2011) High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 99 (14). 141905pp. doi:10.1063/1.3644956
Lin, Y., Hudait, M. K., Johnston, S. W., Ahrenkiel, R. K., Ringel, S. A. (2005) Photoconductivity decay in metamorphic InAsP∕InGaAs double heterostructures grown on InAs[sub y]P[sub 1−y] compositionally step-graded buffers. Applied Physics Letters, 86 (7). 71908pp. doi:10.1063/1.1866645
Zhang, Z., Hurni, C. A., Arehart, A. R., Speck, J. S., Ringel, S. A. (2012) Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy. Applied Physics Letters, 101 (15). 152104pp. doi:10.1063/1.4759037
Nakata, Yoshiaki, Ueda, Osamu, Fujii, Toshio (1991) Two-dimensional electron gas mobility in InGaAs/N-InAlAs heterostructures with ordered inGaAs grown on (110)-oriented InP substrates by molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 504-508 doi:10.1016/0022-0248(91)90794-6
Li, Hanxuan, Wu, Ju, Xu, Bo, Liang, Jiben, Wang, Zhanguo (1998) Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy. Applied Physics Letters, 72 (17). 2123-2125 doi:10.1063/1.121296
Arehart, A. R., Corrion, A., Poblenz, C., Speck, J. S., Mishra, U. K., Ringel, S. A. (2008) Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy. Applied Physics Letters, 93 (11). 112101pp. doi:10.1063/1.2981571
Gür, Emre, Tabares, G., Arehart, A., Chauveau, J. M., Hierro, A., Ringel, S. A. (2012) Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy. Journal of Applied Physics, 112 (12). 123709pp. doi:10.1063/1.4769874
 
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