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Carlin, J. F., Houdré, R., Rudra, A., Ilegems, M. (1991) Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 59 (23). 3018-3020 doi:10.1063/1.105803

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Reference TypeJournal (article/letter/editorial)
TitleIsland formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy
JournalApplied Physics Letters
AuthorsCarlin, J. F.Author
Houdré, R.Author
Rudra, A.Author
Ilegems, M.Author
Year1991 (December 2)Volume59
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.105803Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8496634Long-form Identifiermindat:1:5:8496634:8
GUID0
Full ReferenceCarlin, J. F., Houdré, R., Rudra, A., Ilegems, M. (1991) Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 59 (23). 3018-3020 doi:10.1063/1.105803
Plain TextCarlin, J. F., Houdré, R., Rudra, A., Ilegems, M. (1991) Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 59 (23). 3018-3020 doi:10.1063/1.105803
In(1991, December) Applied Physics Letters Vol. 59 (23) AIP Publishing

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Carlin, J.F., Rudra, A., Houdré, R., Ruterana, P., Ilegems, M. (1992) Effect of growth interruptions on ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy. Journal of Crystal Growth, 120 (1). 155-156 doi:10.1016/0022-0248(92)90381-r
Sallese, J. M., Taylor, S., Bühlmann, H. J., Carlin, J. F., Rudra, A., Houdré, R., Ilegems, M. (1994) As/P interdiffusion in ultrathin InAs/InP strained quantum wells. Applied Physics Letters, 65 (3). 341-343 doi:10.1063/1.112365
Sallese, J. M., Carlin, J. F., Gailhanou, M., Ilegems, M. (1997) Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells. Applied Physics Letters, 71 (16). 2331-2333 doi:10.1063/1.120022
Sallese, J. M., Taylor, S., Bühlmann, H. J., Carlin, J. F., Rudra, A., Houdré, R., Ilegems, M. (1994) Erratum: ‘‘As/P interdiffusion in ultrathin InAs/InP strained quantum wells’’ [Appl. Phys. Lett. 65, 341 (1994)]. Applied Physics Letters, 65 (12). 1596 doi:10.1063/1.113090
Rudra, A., Houdré, R., Carlin, J.F., Ilegems, M. (1994) Dynamics of island formation in the growth of InAs/InP quantum wells. Journal of Crystal Growth, 136 (1). 278-281 doi:10.1016/0022-0248(94)90424-3
Debbar, Nacer, Rudra, Alok, Carlin, Jean‐François, Ilegems, Marc (1994) High‐speed InP/GaInAs metal‐semiconductor‐metal photodetectors grown by chemical beam epitaxy. Applied Physics Letters, 65 (2). 228-230 doi:10.1063/1.112637
Carlin, J.F., Rudra, A., Houdré, R., Staehli, J.L., Ilegems, M. (1991) Growth of GaInAs by chemical beam epitaxy. Journal of Crystal Growth, 107 (1). 1057-1059 doi:10.1016/0022-0248(91)90609-9
Glick, M., Monnard, R., Dwir, B., Carlin, J. F., Rudra, A., Dupertuis, M. A., Reinhart, F. K., Weiser, G. (1994) Phase modulation in InGaAsP barrier, reservoir, and quantum well electron transfer structures, grown by chemical beam epitaxy. Applied Physics Letters, 65 (6). 731-733 doi:10.1063/1.112213
Hopkinson, M., David, J. P. R., Claxton, P. A., Kightley, P. (1992) Growth of strained InAs/InP quantum wells by molecular beam epitaxy. Applied Physics Letters, 60 (7). 841-843 doi:10.1063/1.106531
Lin, Y., Carlin, J. A., Arehart, A. R., Carlin, A. M., Ringel, S. A. (2007) High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy. Applied Physics Letters, 90 (1). 12115pp. doi:10.1063/1.2430403
Sobiesierski, Z., Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G., Viktorovitch, P. (1991) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1863-1865 doi:10.1063/1.105055
 
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