Chèze, C., Feix, F., Lähnemann, J., Flissikowski, T., Kryśko, M., Wolny, P., Turski, H., Skierbiszewski, C., Brandt, O. (2018) Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C. Applied Physics Letters, 112 (2). 22102pp. doi:10.1063/1.5009184
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C | ||
Journal | Applied Physics Letters | ||
Authors | Chèze, C. | Author | |
Feix, F. | Author | ||
Lähnemann, J. | Author | ||
Flissikowski, T. | Author | ||
Kryśko, M. | Author | ||
Wolny, P. | Author | ||
Turski, H. | Author | ||
Skierbiszewski, C. | Author | ||
Brandt, O. | Author | ||
Year | 2018 (January 8) | Volume | 112 |
Issue | 2 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.5009184Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8652017 | Long-form Identifier | mindat:1:5:8652017:7 |
GUID | 0 | ||
Full Reference | Chèze, C., Feix, F., Lähnemann, J., Flissikowski, T., Kryśko, M., Wolny, P., Turski, H., Skierbiszewski, C., Brandt, O. (2018) Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C. Applied Physics Letters, 112 (2). 22102pp. doi:10.1063/1.5009184 | ||
Plain Text | Chèze, C., Feix, F., Lähnemann, J., Flissikowski, T., Kryśko, M., Wolny, P., Turski, H., Skierbiszewski, C., Brandt, O. (2018) Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C. Applied Physics Letters, 112 (2). 22102pp. doi:10.1063/1.5009184 | ||
In | (2018, January) Applied Physics Letters Vol. 112 (2) AIP Publishing |
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