Lee, T F, McGill, T C (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). 3438-3450 doi:10.1088/0022-3719/6/23/017
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Semiempirical calculation of deep levels: divacancy in Si | ||
Journal | Journal of Physics C: Solid State Physics | ||
Authors | Lee, T F | Author | |
McGill, T C | Author | ||
Year | 1973 (November 27) | Volume | 6 |
Issue | 23 | ||
Publisher | IOP Publishing | ||
DOI | doi:10.1088/0022-3719/6/23/017Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8889005 | Long-form Identifier | mindat:1:5:8889005:2 |
GUID | 0 | ||
Full Reference | Lee, T F, McGill, T C (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). 3438-3450 doi:10.1088/0022-3719/6/23/017 | ||
Plain Text | Lee, T F, McGill, T C (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). 3438-3450 doi:10.1088/0022-3719/6/23/017 | ||
In | (1973, November) Journal of Physics C: Solid State Physics Vol. 6 (23) IOP Publishing |
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