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Jaros, M, Ross, S F (1973) Calculations of impurity states in semiconductors: II. GaP:O. Journal of Physics C: Solid State Physics, 6 (23). 3451-3456 doi:10.1088/0022-3719/6/23/018

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Reference TypeJournal (article/letter/editorial)
TitleCalculations of impurity states in semiconductors: II. GaP:O
JournalJournal of Physics C: Solid State Physics
AuthorsJaros, MAuthor
Ross, S FAuthor
Year1973 (November 27)Volume6
Issue23
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/6/23/018Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8889006Long-form Identifiermindat:1:5:8889006:1
GUID0
Full ReferenceJaros, M, Ross, S F (1973) Calculations of impurity states in semiconductors: II. GaP:O. Journal of Physics C: Solid State Physics, 6 (23). 3451-3456 doi:10.1088/0022-3719/6/23/018
Plain TextJaros, M, Ross, S F (1973) Calculations of impurity states in semiconductors: II. GaP:O. Journal of Physics C: Solid State Physics, 6 (23). 3451-3456 doi:10.1088/0022-3719/6/23/018
In(1973, November) Journal of Physics C: Solid State Physics Vol. 6 (23) IOP Publishing

See Also

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Jaros, M, Ross, S F (1973) Calculations of impurity states in semiconductors: I. Journal of Physics C: Solid State Physics, 6 (10). 1753-1762 doi:10.1088/0022-3719/6/10/010
Jaros, M (1975) Two-electron impurity states in GaP:O. Journal of Physics C: Solid State Physics, 8 (15). 2455-2462 doi:10.1088/0022-3719/8/15/019
Jaros, M, Brand, S (1982) Excited states of neutral defects in semiconductors. Journal of Physics C: Solid State Physics, 15 (23). doi:10.1088/0022-3719/15/23/004
Mohammad, S N (1979) Ionised impurity scattering in degenerate semiconductors. Journal of Physics C: Solid State Physics, 12 (23). 5099-5110 doi:10.1088/0022-3719/12/23/018
Jaros, M (1975) Localized electron states associated with Ga and As vacancies in GaAs. Journal of Physics C: Solid State Physics, 8 (23). doi:10.1088/0022-3719/8/23/005
Jaros, M (1975) A simple analytic expression for optical cross sections associated with deep impurity states in semiconductors. Journal of Physics C: Solid State Physics, 8 (11). doi:10.1088/0022-3719/8/11/011
Harker, A H (1973) The F centre in potassium magnesium fluoride. Journal of Physics C: Solid State Physics, 6 (23). 3349-3352 doi:10.1088/0022-3719/6/23/009
Dancz, J, Edwards, S F (1973) The theory of electronic structure of disordered networks. Journal of Physics C: Solid State Physics, 6 (23). 3413-3429 doi:10.1088/0022-3719/6/23/015
Casula, F, Edmondson, D R (1973) The reliability of the semi-empirical tight-binding method for band structure calculations. Journal of Physics C: Solid State Physics, 6 (23). 3403-3412 doi:10.1088/0022-3719/6/23/014
Lee, T F, McGill, T C (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). 3438-3450 doi:10.1088/0022-3719/6/23/017
Szabo, N (1973) On the direct derivation of the resistivity. Journal of Physics C: Solid State Physics, 6 (23). doi:10.1088/0022-3719/6/23/003
 
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