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Eaves, L, Williams, P J (1979) Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/005

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Reference TypeJournal (article/letter/editorial)
TitleDecay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature
JournalJournal of Physics C: Solid State Physics
AuthorsEaves, LAuthor
Williams, P JAuthor
Year1979 (September 28)Volume12
Issue18
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/12/18/005Search in ResearchGate
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Mindat Ref. ID8892555Long-form Identifiermindat:1:5:8892555:2
GUID0
Full ReferenceEaves, L, Williams, P J (1979) Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/005
Plain TextEaves, L, Williams, P J (1979) Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/005
In(1979, September) Journal of Physics C: Solid State Physics Vol. 12 (18) IOP Publishing

See Also

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Instone, T, Eaves, L (1978) Deep centre photoluminescence spectra of GaAs(Cr, Si). Journal of Physics C: Solid State Physics, 11 (18). doi:10.1088/0022-3719/11/18/007
Eaves, L, Williams, P J, Uihlein, C (1981) The observation of a sharp peak in the deep-level photoconductivity spectrum of GaAs(Cr) due to the Cr2+(5T2-5E) 'intracentre' transition. Journal of Physics C: Solid State Physics, 14 (23). doi:10.1088/0022-3719/14/23/004
Maksym, P A, Hearn, C J (1979) Inhomogeneous electric fields in oscillatory photoconductivity. Journal of Physics C: Solid State Physics, 12 (18). 3733-3748 doi:10.1088/0022-3719/12/18/018
Instone, T, Eaves, L (1979) Oscillatory intrinsic photoconductivity in semi-insulating and high-purity n-type indium phosphide. Journal of Physics C: Solid State Physics, 12 (9). doi:10.1088/0022-3719/12/9/001
Kaplan, T, Gray, L J (1979) A comment on disordered systems. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/004
Challis, L J, Wybourne, M N (1979) Frequency crossing signals in thermal conductivity at low concentrations of phonon-scattering centres. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/002
Instone, T, Eaves, L (1978) On the interpretation of photoconductivity spectra of GaAs doped with deep traps. Journal of Physics C: Solid State Physics, 11 (7). doi:10.1088/0022-3719/11/7/006
Kuznicki, Z T, Maschke, K, Schmid, Ph (1979) Influence of stacking disorder on the photoconductivity of GaSe. Journal of Physics C: Solid State Physics, 12 (18). 3749-3755 doi:10.1088/0022-3719/12/18/019
Svantesson, K G, Nilsson, N G (1979) Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm. Journal of Physics C: Solid State Physics, 12 (18). 3837-3842 doi:10.1088/0022-3719/12/18/029
Sluckin, T J (1979) Low-temperature mobility of positive ions in helium vapour. Journal of Physics C: Solid State Physics, 12 (12). doi:10.1088/0022-3719/12/12/001
Korczynskyj, Y, Bowley, R M, Fletcher, J R (1979) Further complexities in the dispersion of phonons in liquid helium. Journal of Physics C: Solid State Physics, 12 (15). 2957-2964 doi:10.1088/0022-3719/12/15/005
 
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