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Svantesson, K G, Nilsson, N G (1979) Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm. Journal of Physics C: Solid State Physics, 12 (18). 3837-3842 doi:10.1088/0022-3719/12/18/029

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm
JournalJournal of Physics C: Solid State Physics
AuthorsSvantesson, K GAuthor
Nilsson, N GAuthor
Year1979 (September 28)Volume12
Issue18
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/12/18/029Search in ResearchGate
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Mindat Ref. ID8892579Long-form Identifiermindat:1:5:8892579:2
GUID0
Full ReferenceSvantesson, K G, Nilsson, N G (1979) Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm. Journal of Physics C: Solid State Physics, 12 (18). 3837-3842 doi:10.1088/0022-3719/12/18/029
Plain TextSvantesson, K G, Nilsson, N G (1979) Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm. Journal of Physics C: Solid State Physics, 12 (18). 3837-3842 doi:10.1088/0022-3719/12/18/029
In(1979, September) Journal of Physics C: Solid State Physics Vol. 12 (18) IOP Publishing

See Also

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Svantesson, K G, Nilsson, N G (1979) The temperature dependence of the Auger recombination coefficient of undoped silicon. Journal of Physics C: Solid State Physics, 12 (23). 5111-5120 doi:10.1088/0022-3719/12/23/019
Svantesson, K G (1979) Determination of the interband and the free carrier absorption constants in silicon at high-level photoinjection. Journal of Physics D: Applied Physics, 12. 425-436 doi:10.1088/0022-3727/12/3/012
Nilsson, N G, Svantesson, K G (1980) The role of free carrier absorption in laser annealing of silicon at 1.06μm. Journal of Physics D: Applied Physics, 13. 39-44 doi:10.1088/0022-3727/13/1/013
Svantesson, K G, Nilsson, N G (1978) Determination of the Absorption and the Free Carrier Distribution in Silicon at High Level Photogeneration at 1.06 μm and 294 K. Physica Scripta, 18 (6). 405-409 doi:10.1088/0031-8949/18/6/012
Soejima, Y, Inoue, K, Kawahara, T, Ohama, N, Okazaki, A (1985) Anisotropic stress-sensitive temperature dependence of the lattice constant of silicon. Journal of Physics C: Solid State Physics, 18 (12). 2431-2436 doi:10.1088/0022-3719/18/12/007
Sodolski, H (1979) Determination of ion mobility from ionic injection current at strong diffusion. Journal of Physics C: Solid State Physics, 12 (18). 3717-3724 doi:10.1088/0022-3719/12/18/016
Kubakaddi, S S, Mulimani, B G (1985) Free-carrier absorption in semiconducting quantum well wires. Journal of Physics C: Solid State Physics, 18 (36). 6647-6652 doi:10.1088/0022-3719/18/36/019
Loh, E, Blazey, K W, Nosenzo, L, Reguzzoni, E (1979) Wavelength- and temperature-modulated ultraviolet absorption of Pr3+in alkaline-earth fluorides. Journal of Physics C: Solid State Physics, 12 (18). 3879-3888 doi:10.1088/0022-3719/12/18/033
Doman, B G S (1979) The two-dimensional Wigner crystal in a magnetic field. Journal of Physics C: Solid State Physics, 12 (18). 3757-3760 doi:10.1088/0022-3719/12/18/020
Ahmad, C N, Adams, A R, Pitt, G D (1979) Temperature dependence of the electron mobility in the Δ1cminima of germanium. Journal of Physics C: Solid State Physics, 12 (10). doi:10.1088/0022-3719/12/10/005
Eaves, L, Williams, P J (1979) Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature. Journal of Physics C: Solid State Physics, 12 (18). doi:10.1088/0022-3719/12/18/005
 
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