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Makiuchi, N, Leite, J R, Fazzio, A (1984) Electronic structure of a single neutral ideal phosphorus vacancy in GaP. Journal of Physics C: Solid State Physics, 17 (19). 3423-3428 doi:10.1088/0022-3719/17/19/016

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of a single neutral ideal phosphorus vacancy in GaP
JournalJournal of Physics C: Solid State Physics
AuthorsMakiuchi, NAuthor
Leite, J RAuthor
Fazzio, AAuthor
Year1984 (July 10)Volume17
Issue19
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/17/19/016Search in ResearchGate
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Mindat Ref. ID8896540Long-form Identifiermindat:1:5:8896540:8
GUID0
Full ReferenceMakiuchi, N, Leite, J R, Fazzio, A (1984) Electronic structure of a single neutral ideal phosphorus vacancy in GaP. Journal of Physics C: Solid State Physics, 17 (19). 3423-3428 doi:10.1088/0022-3719/17/19/016
Plain TextMakiuchi, N, Leite, J R, Fazzio, A (1984) Electronic structure of a single neutral ideal phosphorus vacancy in GaP. Journal of Physics C: Solid State Physics, 17 (19). 3423-3428 doi:10.1088/0022-3719/17/19/016
In(1984, July) Journal of Physics C: Solid State Physics Vol. 17 (19) IOP Publishing

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Fazzio, A, Brescansin, L M, Leite, J R (1982) Electronic structure of neutral and negatively charged gallium vacancies in GaP. Journal of Physics C: Solid State Physics, 15 (2). doi:10.1088/0022-3719/15/2/001
Erdos, P, Suto, A (1984) Journal of Physics C: Solid State Physics, 17 (19). IOP Publishing. 3315-3336 doi:10.1088/0022-3719/17/19/009
Fazzio, A, Leite, J R, Siqueira, M L De (1979) Multiple scattering-Xα cluster model of GaAs: electronic states of isolated vacancies and substitutional impurities. Journal of Physics C: Solid State Physics, 12 (17). 3469-3481 doi:10.1088/0022-3719/12/17/018
Saleh, N S (1984) EPR study of antiferromagnetic ordering in MnSeO4. Journal of Physics C: Solid State Physics, 17 (19). 3489-3492 doi:10.1088/0022-3719/17/19/022
Fazzio, A, Brescansin, L M, Calda, M J, Leite, J R (1979) Electronic structure of oxygen-doped gallium arsenide. Journal of Physics C: Solid State Physics, 12 (22). doi:10.1088/0022-3719/12/22/002
Khan, F A, Bhattacharya, D P (1984) Low-temperature breakdown characteristics in n-Ge. Journal of Physics C: Solid State Physics, 17 (19). 3463-3473 doi:10.1088/0022-3719/17/19/020
Alves, J L A, Leite, J R, Assali, L V C, Gomes, V M S, Silva, C E T Goncalves da (1984) Electronic structure of gold substitutional impurity in silicon. Journal of Physics C: Solid State Physics, 17 (29). doi:10.1088/0022-3719/17/29/003
Barnas, J, Kowalewski, L (1984) Magnetic polaritons in electronic-type ferromagnetoelectrics. Journal of Physics C: Solid State Physics, 17 (11). 1973-1990 doi:10.1088/0022-3719/17/11/016
Itoh, S, Nakao, K (1984) Electronic states in allotropes of sulphur and selenium-localised orbital approach. Journal of Physics C: Solid State Physics, 17 (19). 3373-3389 doi:10.1088/0022-3719/17/19/012
Rest, J Van der, Pecheurs, P (1984) Electronic structure of the ideal vacancies in Ge, GaAs and ZnSe crystals. Journal of Physics C: Solid State Physics, 17 (1). 85-95 doi:10.1088/0022-3719/17/1/015
Davies, G, Lightowlers, E C, Woolley, R, Newman, R C, Oates, A S (1984) Carbon in radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 17 (19). doi:10.1088/0022-3719/17/19/005
 
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