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Kaya, Ahmet (2015) On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K. International Journal of Modern Physics B, 29 (4). 1550010pp. doi:10.1142/s0217979215500101

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Reference TypeJournal (article/letter/editorial)
TitleOn the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K
JournalInternational Journal of Modern Physics B
AuthorsKaya, AhmetAuthor
Year2015 (February 10)Volume29
Issue4
PublisherWorld Scientific Pub Co Pte Lt
DOIdoi:10.1142/s0217979215500101Search in ResearchGate
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Mindat Ref. ID8911412Long-form Identifiermindat:1:5:8911412:6
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Full ReferenceKaya, Ahmet (2015) On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K. International Journal of Modern Physics B, 29 (4). 1550010pp. doi:10.1142/s0217979215500101
Plain TextKaya, Ahmet (2015) On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K. International Journal of Modern Physics B, 29 (4). 1550010pp. doi:10.1142/s0217979215500101
In(2015, February) International Journal of Modern Physics B Vol. 29 (4) World Scientific Pub Co Pte Lt

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Çetinkaya, H. G., Yıldız, D. E., Altındal, Ş. (2015) On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity. International Journal of Modern Physics B, 29 (1). 1450237pp. doi:10.1142/s0217979214502373
Altındal, Şemsettin, Uslu, Habibe (2011) The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures. Journal of Applied Physics, 109 (7). 74503pp. doi:10.1063/1.3554479
EFEOǦLU, HASAN, TURUT, ABDULMECIT (2013) THE CURRENT–VOLTAGE CHARACTERISTICS OF THE Au/MBEn-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE. International Journal of Modern Physics B, 27 (19). 1350088pp. doi:10.1142/s0217979213500884
Al-Dharob, Mohammad Hussein, Kökce, Ali, Aldemir, Durmuş Ali, Özdemir, Ahmet Faruk, Altındal, Şemsettin (2020) The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements. Journal of Physics and Chemistry of Solids, 144. 109523pp. doi:10.1016/j.jpcs.2020.109523
Yücedağ, İbrahim, Ersöz, Gülçin, Gümüş, Ahmet, Altındal, Şemsettin (2015) Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage. International Journal of Modern Physics B, 29 (13). 1550075pp. doi:10.1142/s0217979215500757
Taşçıoğlu, İlke, Aydemir, Umut, Altındal, Şemsettin, Kınacı, Barış, Özçelik, Süleyman (2011) Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range. Journal of Applied Physics, 109 (5). 54502pp. doi:10.1063/1.3552599
Kaya, A., Çetinkaya, H. G., Altındal, Ş., Uslu, İ. (2016) A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer. International Journal of Modern Physics B, 30 (16). 1650090pp. doi:10.1142/s0217979216500909
Alialy, S., Altındal, Ş., Tanrıkulu, E. E., Yıldız, D. E. (2014) Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116 (8). 83709pp. doi:10.1063/1.4893970
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Tecimer, H., Vural, Ö., Kaya, A., Altındal, Ş. (2015) Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures. International Journal of Modern Physics B, 29 (13). 1550076pp. doi:10.1142/s0217979215500769
Camara, N., Thuaire, A., Bano, E., Zekentes, K. (2005) Forward-bias degradation in 4H-SiC p+nn+diodes: Influence of the mesa etching. physica status solidi (a), 202 (4). 660-664 doi:10.1002/pssa.200460469
 
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