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Yoshikawa, Masahito, Kojima, Kazutoshi, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei, Ishida, Yuuki (2000) Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures. Materials Science Forum, 338. 1129-1132 doi:10.4028/www.scientific.net/msf.338-342.1129

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Reference TypeJournal (article/letter/editorial)
TitleEffects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
JournalMaterials Science Forum
AuthorsYoshikawa, MasahitoAuthor
Kojima, KazutoshiAuthor
Ohshima, TakeshiAuthor
Itoh, HisayoshiAuthor
Okada, SoheiAuthor
Ishida, YuukiAuthor
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1129Search in ResearchGate
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Mindat Ref. ID9849604Long-form Identifiermindat:1:5:9849604:0
GUID0
Full ReferenceYoshikawa, Masahito, Kojima, Kazutoshi, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei, Ishida, Yuuki (2000) Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures. Materials Science Forum, 338. 1129-1132 doi:10.4028/www.scientific.net/msf.338-342.1129
Plain TextYoshikawa, Masahito, Kojima, Kazutoshi, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei, Ishida, Yuuki (2000) Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures. Materials Science Forum, 338. 1129-1132 doi:10.4028/www.scientific.net/msf.338-342.1129
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

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Ohshima, Takeshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu (2000) Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs. Materials Science Forum, 338. 1299-1302 doi:10.4028/www.scientific.net/msf.338-342.1299
Kojima, Kazutoshi, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei (2000) Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition. Materials Science Forum, 338. 1239-1242 doi:10.4028/www.scientific.net/msf.338-342.1239
Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Yoshikawa, Masahito, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu, Bouwhuis, L., Tanigawa, Shoichiro, Frank, Thomas, Pensl, Gerhard (2000) Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions. Materials Science Forum, 338. 857-860 doi:10.4028/www.scientific.net/msf.338-342.857
Yoshikawa, Masahito, Satoh, Mirei, Ohshima, Takeshi, Itoh, Hisayoshi (2002) Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures. Materials Science Forum, 389. 1009-1012 doi:10.4028/www.scientific.net/msf.389-393.1009
Ohshima, Takeshi, Lee, Kin Kiong, Ishida, Yuuki, Tanaka, Yasunori, Kojima, Kazutoshi, Takahashi, Tetsuo, Yoshikawa, Masahito, Okumura, Hajime, Arai, Kazuo, Kamiya, Toshio (2004) Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC. Materials Science Forum, 457. 1405-1408 doi:10.4028/www.scientific.net/msf.457-460.1405
Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, Takahashi, Kunimasa, Kitabatake, Makoto (2001) Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC. Materials Science Forum, 353. 635-638 doi:10.4028/www.scientific.net/msf.353-356.635
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Ohi, Akihiko, Ohshima, Takeshi, Yoshikawa, Masahito, Lee, Kin Kiong, Iwami, Motohiro, Itoh, Hisayoshi (2002) Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum. Materials Science Forum, 389. 831-834 doi:10.4028/www.scientific.net/msf.389-393.831
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