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Ohshima, Takeshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu (2000) Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs. Materials Science Forum, 338. 1299-1302 doi:10.4028/www.scientific.net/msf.338-342.1299

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
JournalMaterials Science Forum
AuthorsOhshima, TakeshiAuthor
Yoshikawa, MasahitoAuthor
Itoh, HisayoshiAuthor
Kojima, KazutoshiAuthor
Okada, SoheiAuthor
Nashiyama, IsamuAuthor
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1299Search in ResearchGate
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Mindat Ref. ID9849648Long-form Identifiermindat:1:5:9849648:4
GUID0
Full ReferenceOhshima, Takeshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu (2000) Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs. Materials Science Forum, 338. 1299-1302 doi:10.4028/www.scientific.net/msf.338-342.1299
Plain TextOhshima, Takeshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu (2000) Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs. Materials Science Forum, 338. 1299-1302 doi:10.4028/www.scientific.net/msf.338-342.1299
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

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Yoshikawa, Masahito, Kojima, Kazutoshi, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei, Ishida, Yuuki (2000) Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures. Materials Science Forum, 338. 1129-1132 doi:10.4028/www.scientific.net/msf.338-342.1129
Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Yoshikawa, Masahito, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu, Bouwhuis, L., Tanigawa, Shoichiro, Frank, Thomas, Pensl, Gerhard (2000) Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions. Materials Science Forum, 338. 857-860 doi:10.4028/www.scientific.net/msf.338-342.857
Kojima, Kazutoshi, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei (2000) Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition. Materials Science Forum, 338. 1239-1242 doi:10.4028/www.scientific.net/msf.338-342.1239
Bouwhuis, L., Ohshima, Takeshi, Itoh, Hisayoshi, Aoki, Y., Yoshikawa, Masahito, Nashiyama, Isamu, Iwami, Motohiro (1998) Hot-Implantation of Phosphorus Ions into 6H-SiC. Materials Science Forum, 264. 721-724 doi:10.4028/www.scientific.net/msf.264-268.721
Ohi, Akihiko, Ohshima, Takeshi, Yoshikawa, Masahito, Lee, Kin Kiong, Iwami, Motohiro, Itoh, Hisayoshi (2002) Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum. Materials Science Forum, 389. 831-834 doi:10.4028/www.scientific.net/msf.389-393.831
Ohshima, Takeshi, Lee, Kin Kiong, Ohi, Akihiko, Yoshikawa, Masahito, Itoh, Hisayoshi (2002) Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide. Materials Science Forum, 389. 1093-1096 doi:10.4028/www.scientific.net/msf.389-393.1093
Yoshikawa, Masahito, Saitoh, K., Ohshima, Takeshi, Itoh, Hisayoshi, Nashiyama, Isamu, Takahashi, Yasutaka, Ohnishi, K., Okumura, Hajime, Yoshida, Sadafumi (1998) Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays. Materials Science Forum, 264. 1017-1020 doi:10.4028/www.scientific.net/msf.264-268.1017
Ohshima, Takeshi, Itoh, Hisayoshi, Yoshikawa, Masahito (2001) Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions. Materials Science Forum, 353. 575-578 doi:10.4028/www.scientific.net/msf.353-356.575
Kawasuso, Atsuo, Kojima, Kazutoshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Okada, Sohei, Ichimiya, Ayahiko (2001) Reflection High-Energy Positron Diffraction: Solved and Unsolved Problems. Materials Science Forum, 363. 445-447 doi:10.4028/www.scientific.net/msf.363-365.445
Yoshikawa, Masahito, Satoh, Mirei, Ohshima, Takeshi, Itoh, Hisayoshi (2002) Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures. Materials Science Forum, 389. 1009-1012 doi:10.4028/www.scientific.net/msf.389-393.1009
Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Bouwhuis, L., Suzuki, Ryoichi, Ohdaira, Toshiyuki, Aoki, Y., Yoshikawa, Masahito, Mikado, Tomohisa, Okumura, Hajime, Yoshida, Sadafumi, Tanigawa, Shoichiro, Nashiyama, Isamu (1998) Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation. Materials Science Forum, 264. 745-748 doi:10.4028/www.scientific.net/msf.264-268.745
 
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